生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 1.61 |
JESD-609代码: | e3 | 湿度敏感等级: | 2 |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTA160N075T | IXYS |
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Preliminary Technical Information TrenchMVTM Power MOSFET | |
IXTA160N075T | LITTELFUSE |
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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低 | |
IXTA160N075T7 | IXYS |
获取价格 |
Power Field-Effect Transistor, 160A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Me | |
IXTA160N075T7 | LITTELFUSE |
获取价格 |
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低 | |
IXTA160N10T | IXYS |
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Power Field-Effect Transistor, 160A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, M | |
IXTA160N10T | LITTELFUSE |
获取价格 |
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低 | |
IXTA160N10T7 | IXYS |
获取价格 |
Power Field-Effect Transistor, 160A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, M | |
IXTA160N10T7 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTA16N50P | IXYS |
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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated | |
IXTA16N50P | LITTELFUSE |
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Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡 |