5秒后页面跳转
IXTA110N055T PDF预览

IXTA110N055T

更新时间: 2024-11-21 19:53:11
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 206K
描述
Power Field-Effect Transistor, 110A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN

IXTA110N055T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67其他特性:AVALANCHE RATED
雪崩能效等级(Eas):750 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):110 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTA110N055T 数据手册

 浏览型号IXTA110N055T的Datasheet PDF文件第2页浏览型号IXTA110N055T的Datasheet PDF文件第3页浏览型号IXTA110N055T的Datasheet PDF文件第4页浏览型号IXTA110N055T的Datasheet PDF文件第5页 
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTA110N055T  
IXTP110N055T  
VDSS = 55  
ID25 = 110  
RDS(on) 7.0 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (IXTA)  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
55  
55  
V
V
G
S
VGSM  
Transient  
20  
V
(TAB)  
ID25  
ILRMS  
IDM  
TC = 25° C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
110  
75  
300  
A
A
A
TO-220 (IXTP)  
IAR  
EAS  
TC =25°C  
TC =25°C  
25  
750  
A
mJ  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 175° C, RG = 5 Ω  
3
V/ns  
G
(TAB)  
D
S
TC =25°C  
230  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
Ultra-low On Resistance  
Unclamped Inductive Switching (UIS)  
rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Low package inductance  
- easy to drive and to protect  
175 ° C Operating Temperature  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
3
g
g
2.5  
Advantages  
Easy to mount  
Space savings  
High power density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
Automotive  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 100 µA  
55  
V
V
- Motor Drives  
- High Side Switch  
- 12VBattery  
2.0  
4.0  
- ABS Systems  
VGS  
=
20 V, VDS = 0 V  
200  
nA  
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
High Current Switching  
IDSS  
VDS = VDSS  
VGS = 0 V  
2
250  
µA  
µA  
TJ = 150° C  
Applications  
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
5.8  
7.0 m Ω  
DS99625 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  

IXTA110N055T 替代型号

型号 品牌 替代类型 描述 数据表
IXTA110N055T2 IXYS

类似代替

DC to DC Synchronous Converter Design
IPD90N06S3L-07 INFINEON

功能相似

OptiMOS-T Power-Transistor

与IXTA110N055T相关器件

型号 品牌 获取价格 描述 数据表
IXTA110N055T2 IXYS

获取价格

DC to DC Synchronous Converter Design
IXTA110N055T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXTA110N055T2-TRL IXYS

获取价格

Power Field-Effect Transistor,
IXTA110N055T7 IXYS

获取价格

Power Field-Effect Transistor, 112A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Me
IXTA110N055T7 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA110N12T2 IXYS

获取价格

Power Field-Effect Transistor,
IXTA110N12T2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA120N04T2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA120N04T2 IXYS

获取价格

Power Field-Effect Transistor, 120A I(D), 40V, 0.0061ohm, 1-Element, N-Channel, Silicon, M
IXTA120N075T2 IXYS

获取价格

Power Field-Effect Transistor, 120A I(D), 75V, 0.0077ohm, 1-Element, N-Channel, Silicon, M