Datasheet > IXTA110N055T7

IXTA110N055T7

更新时间： 2024-11-05 21:11:23

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	240K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXTA110N055T7 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

IXTA110N055T7 数据手册

Preliminary Technical Information

TrenchMV^TM

Power MOSFET

V_DSS= 55

I_D25= 110

R_DS(on)≤ 7.0 mΩ

IXTA110N055T7

N-Channel Enhancement Mode

Avalanche Rated

Symbol

Test Conditions

Maximum Ratings

TO-263 (7-lead) (IXTA..7)

V_DSS

V_DGR

T_J= 25° C to 175° C

T_J= 25° C to 175° C; R_GS= 1 MΩ

V_GSM

Transient

I_D25

I_DM

T_C=25°C

110

300

T_C= 25° C, pulse width limited by T_JM

(TAB)

Pin-out:1 - Gate

I_AR

E_AS

T_C=25°C

750

2, 3 - Source

4 - NC (cut)

5,6,7 - Source

TAB (8) - Drain

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤175° C, R_G= 5 Ω

V/ns

T_C=25°C

230

Features

^ꢀUltra-low On Resistance

^ꢀUnclamped Inductive Switching (UIS)

rated

^ꢀLow package inductance

- easy to drive and to protect

^ꢀ175 ° C Operating Temperature

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 seconds

300

260

°C

Weight

Advantages

ꢀ

Easy to mount

Space savings

ꢀ

High power density

Applications

ꢀ

Automotive

Symbol

Test Conditions

Characteristic Values

- Motor Drives

- High Side Switch

- 12VBattery

(T_J= 25° C unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 100 µA

- ABS Systems

2.0

4.0

ꢀ

DC/DC Converters and Off-line UPS

Primary- Side Switch

High Current Switching

ꢀ

V_GS

20 V, V_DS= 0 V

200

ꢀ

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

Applications

T_J= 150° C

R_DS(on)

V_GS= 10 V, I_D= 25 A, Note 1

5.5

7.0 mΩ

DS99680 (11/06)

12 3 4 5 6

中文翻译

下载PDF

与IXTA110N055T7相关器件

型号	品牌	获取价格	描述	数据表
IXTA110N12T2	IXYS	获取价格	Power Field-Effect Transistor,
IXTA110N12T2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA120N04T2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA120N04T2	IXYS	获取价格	Power Field-Effect Transistor, 120A I(D), 40V, 0.0061ohm, 1-Element, N-Channel, Silicon, M
IXTA120N075T2	IXYS	获取价格	Power Field-Effect Transistor, 120A I(D), 75V, 0.0077ohm, 1-Element, N-Channel, Silicon, M
IXTA120N075T2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA120P065T	IXYS	获取价格	TrenchPTM Power MOSFETs P-Channel Enhancement Mode
IXTA120P065T	LITTELFUSE	获取价格	Trench P通道MOSFET非常适合“高压侧”开关应用，这些应用可采用简单的接地参考驱
IXTA120P065T-TRL	IXYS	获取价格	Power Field-Effect Transistor,
IXTA12N50P	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated