Datasheet > IXTA110N12T2

IXTA110N12T2

更新时间： 2024-09-14 19:40:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	212K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTA110N12T2 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.37	Base Number Matches：	1

IXTA110N12T2 数据手册

Advance Technical Information

TrenchT2^TM

Power MOSFET

V_DSS= 120V

I_D25= 110A

R_DS(on) 14m

IXTA110N12T2

IXTP110N12T2

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

TO-263AA (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (Tab)

T_J= 25C to 175C

T_J= 25C to 175C, R_GS= 1M

120

V_DGR

TO-220AB (IXTP)

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_DM

T_C= 25C

110

200

T_C= 25C, Pulse Width Limited by T_JM

D (Tab)

= Drain

I_A

T_C= 25C

800

517

E_AS

P_D

G = Gate

S = Source

Tab = Drain

T_J

-55 ... +175

175



C

T_JM

T_stg

Features

-55 ... +175

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

^International Standard Packages

^175°C Operating Temperature

^Avalanche Rated

M_d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.



Low R_DS(on)

Weight

TO-263

TO-220

2.5

3.0

^Fast Intrinsic Rectifier

^High Current Handling Capability

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25C Unless Otherwise Specified)

Min. Typ.

Max.



Easy to Mount

Space Savings

High Power Density



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS=  20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

120

2.5



4.5

            200 nA

Applications

I_DSS

5 A



Synchronous Rectification

DC/DC Converters and Off-Line UPS

Primary- Side Switch

High Current Switching Applications

T_J= 150C

V_GS= 10V, I_D= 0.5 • I_D25, Notes 1, 2

350 A



R_DS(on)

11.4 14.0 m



DS100830A(5/17)

12 3 4 5 6

中文翻译

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