Datasheet > IXSH30N60U1

IXSH30N60U1

更新时间： 2024-11-05 21:54:31

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
6页	85K
描述
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability

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中文翻译

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数据手册
替代型号

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IXSH30N60U1 数据手册

V_CES

I_C25V_CE(sat)

Low V_CE(sat)IGBT with Diode

High Speed IGBT with Diode

IXSH30N60U1

IXSH30N60AU1

600V 50 A 2.5V

600V 50 A 3.0V

CombiPacks

Short Circuit SOA Capability

TO-247 AD

Symbol

TestConditions

MaximumRatings

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MW

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

T_C= 90°C

T_C= 25°C, 1 ms

100

SSOA

(RBSOA)

V_GE= 15 V, T_J= 125°C, R_G= 33 W

Clamped inductive load, L = 100 mH

I_CM= 60

@ 0.8 V_CES

Features

t_SC

(SCSOA)

V_GE= 15 V, V_CE= 360 V, T_J= 125°C

R_G= 33 W, non repetitive

• Internationalstandardpackage

JEDEC TO-247 AD

• High frequency IGBT with guaranteed

Short Circuit SOA capability

• IGBT and anti-parallel FRED in one

package

P_C

T_C= 25°C

200

T_J

-55 ... +150

150

°C

T_JM

T_stg

• 2nd generation HDMOS^TMprocess

• Low V_CE(sat)

-55 ... +150

M_d

Mountingtorque

1.13/10 Nm/lb.in.

- for low on-state conduction losses

• MOS Gate turn-on

- drive simplicity

Weight

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptiblepowersupplies(UPS)

• Switch-modeandresonant-mode

powersupplies

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

BV_CES

V_GE(th)

I_C= 750 mA, V_GE= 0 V

600

I_C= 2.5 mA, V_CE= V_GE

Advantages

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

500 mA

• Space savings (two devices in one

package)

• Easy to mount with 1 screw

(isolatedmountingscrewhole)

• Reduces assembly time and cost

• High power density

I_GES

V_CE= 0 V, V_GE= ±20 V

±100 nA

V_CE(sat)

I_C= I_C90, V_GE= 15 V

30N60U1

30N60AU1

2.5

3.0

IXYS reserves the right to change limits, test conditions, and dimensions.

92714F(12/96)

1 - 6

12 3 4 5 6

中文翻译

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IXSH30N60U1 替代型号

型号	品牌	替代类型	描述	数据表
IXXH30N60B3D1	IXYS	类似代替	XPTTM 600V IGBT GenX3TM w/ Diode

与IXSH30N60U1相关器件

型号	品牌	获取价格	描述	数据表
IXSH35N100	IXYS	获取价格	Insulated Gate Bipolar Transistor, 35A I(C), 1000V V(BR)CES, N-Channel
IXSH35N100A	IXYS	获取价格	High speed IGBT
IXSH35N120A	IXYS	获取价格	High Voltage, High speed IGBT
IXSH35N120AU1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), N-Channel, TO-247AD,
IXSH35N120B	IXYS	获取价格	IGBT
IXSH35N120BD1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), N-Channel, TO-247AD,
IXSH35N135A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.35KV V(BR)CES \| 70A I(C) \| TO-247AD
IXSH35N140A	IXYS	获取价格	High Voltage, High speed IGBT - Short Circuit SOA Capability
IXSH40N60	IXYS	获取价格	High Speed IGBT
IXSH40N60A	IXYS	获取价格	Low VCE(sat) IGBT, High Speed IGBT

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