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IXSH45N100 PDF预览

IXSH45N100

更新时间: 2024-09-28 22:47:59
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
4页 106K
描述
Low VCE(sat) IGBT - Short Circuit SOA Capability

IXSH45N100 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:TO-247AD, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.81
外壳连接:COLLECTOR最大集电极电流 (IC):75 A
集电极-发射极最大电压:1000 V配置:SINGLE
最大降落时间(tf):1500 ns门极发射器阈值电压最大值:7 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:300 W
最大功率耗散 (Abs):300 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):2750 ns
标称接通时间 (ton):400 nsVCEsat-Max:2.7 V
Base Number Matches:1

IXSH45N100 数据手册

 浏览型号IXSH45N100的Datasheet PDF文件第2页浏览型号IXSH45N100的Datasheet PDF文件第3页浏览型号IXSH45N100的Datasheet PDF文件第4页 
Low VCE(sat) IGBT  
IXSH 45N100 VCES  
IXSM 45N100 IC25  
= 1000 V  
= 75 A  
VCE(sat) = 2.7 V  
Short Circuit SOA Capability  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD (IXSH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
75  
45  
A
A
A
TO-204 AE (IXSM)  
TC = 90°C  
TC = 25°C, 1 ms  
180  
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 2.7 W  
Clamped inductive load, L = 30 mH  
ICM = 90  
@ 0.8 VCES  
A
tSC  
(SCSOA)  
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C  
RG = 22 W, non repetitive  
10  
ms  
W
C
PC  
TC = 25°C  
300  
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
• Internationalstandardpackages  
• Guaranteed Short Circuit SOA  
capability  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• Low VCE(sat)  
- for low on-state conduction losses  
• Highcurrenthandlingcapability  
• MOS Gate turn-on  
- drive simplicity  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
• AC motor speed control  
• Uninterruptiblepowersupplies(UPS)  
• Welding  
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
IC = 4 mA, VCE = VGE  
1000  
5
V
V
8
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250 mA  
mA  
1
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.7  
• Easy to mount with 1 screw (TO-247)  
(isolatedmountingscrewhole)  
• High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
93013E(12/96)  
1 - 4  

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