是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | BFM |
包装说明: | TO-204AE, 3 PIN | 针数: | 2 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 75 A |
集电极-发射极最大电压: | 1000 V | 配置: | SINGLE |
最大降落时间(tf): | 1500 ns | 门极发射器阈值电压最大值: | 7 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-204AE |
JESD-30 代码: | O-MBFM-P2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 300 W |
最大功率耗散 (Abs): | 300 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 2750 ns |
标称接通时间 (ton): | 400 ns | VCEsat-Max: | 2.7 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXSN30N100AU1 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 34A I(C) | SOT-227B | |
IXSN35N100AU1 | ETC |
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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 80A I(C) | |
IXSN35N100U1 | IXYS |
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IGBT with Diode - High Short Circuit SOA Capability | |
IXSN35N120AU1 | IXYS |
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High Voltage IGBT with Diode | |
IXSN35N120AU2 | IXYS |
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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, SOT-227B, 4 PIN | |
IXSN35N120AU3 | IXYS |
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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, SOT-227B, 4 PIN | |
IXSN35N120U1 | IXYS |
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Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel, SOT-227B, 4 PIN | |
IXSN40N60AU1 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | SOT-227B | |
IXSN50N100AU1 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 53A I(C) | SOT-227B | |
IXSN50N120AU1 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 75A I(C) | SOT-227B |