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IXSH45N120 PDF预览

IXSH45N120

更新时间: 2024-11-08 22:05:11
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
4页 91K
描述
High Voltage, Low VCE(sat) IGBT

IXSH45N120 数据手册

 浏览型号IXSH45N120的Datasheet PDF文件第2页浏览型号IXSH45N120的Datasheet PDF文件第3页浏览型号IXSH45N120的Datasheet PDF文件第4页 
High Voltage,  
Low VCE(sat) IGBT  
IXSH 45N120 VCES  
= 1200 V  
= 75 A  
IC25  
VCE(sat) = 3 V  
Short Circuit SOA Capability  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C, limited by leads  
TC = 90°C  
75  
45  
A
A
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 25°C, 1 ms  
180  
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 2.7 W  
Clamped inductive load, L = 30 mH  
ICM = 90  
@ 0.8 VCES  
A
tSC  
(SCSOA)  
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C  
RG = 22 W, non repetitive  
10  
ms  
W
Features  
PC  
TC = 25°C  
300  
Internationalstandardpackage  
JEDEC TO-247  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
High frequency IGBT with guaranteed  
Short Circuit SOA capability  
Fast Fall Time for switching speeds  
up to 20 kHz  
TJM  
Tstg  
-55 ... +150  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
2nd generation HDMOSTM process  
Low VCE(sat)  
Weight  
6
g
- forminimumon-stateconduction  
losses  
MOS Gate turn-on  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- drive simplicity  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
AC motor speed control  
DC servo and robot drive  
Uninterruptiblepowersupplies(UPS)  
Switch-modeandresonant-mode  
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
IC = 4 mA, VCE = VGE  
1200  
4
V
V
6
8
powersupplies  
Welding  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
400 mA  
1.2 mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
3
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
92773F(7/00)  
1 - 4  

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