是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-264 |
包装说明: | TO-264, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.82 |
其他特性: | HIGH SPEED | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 75 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | JEDEC-95代码: | TO-264 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 460 ns |
标称接通时间 (ton): | 140 ns | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXXK100N60B3H1 | IXYS |
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Extreme Light Punch Through IGBT for 10-30kHz Switching |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXSK50N60BU1 | IXYS |
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IGBT with Diode |
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IXSK80N60B | IXYS |
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High Current IGBT Short Circuit SOA Capability |
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IXSM17N100 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-204 |
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IXSM17N100A | IXYS |
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Insulated Gate Bipolar Transistor, 17A I(C), 1000V V(BR)CES, N-Channel |
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IXSM20N60 | IXYS |
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Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-204AE, TO-204AE, |
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IXSM20N60A | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-204AE |
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IXSM25N100 | IXYS |
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Low VCE(sat) IGBT, High Speed IGBT |
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IXSM25N100A | IXYS |
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Low VCE(sat) IGBT, High Speed IGBT |
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IXSM30N60 | IXYS |
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Low VCE(sat) IGBT, High Speed IGBT |
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IXSM30N60A | IXYS |
获取价格 |
Low VCE(sat) IGBT, High Speed IGBT |
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