Datasheet > IXSK40N60CD1

IXSK40N60CD1

更新时间： 2024-11-18 11:08:07

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
2页	49K
描述
IGBT with Diode

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中文翻译

获取价格

数据手册
替代型号

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IXSK40N60CD1 数据手册

IXSK 40N60CD1

IXSX 40N60CD1

IGBT with Diode

V_CES

I_C25

= 600 V

= 75 A

PLUS247^TMpackage

V_CE(sat)= 2.5 V

Short Circuit SOA Capability

t_fi(typ)

= 70 ns

Preliminary data

Symbol

TestConditions

MaximumRatings

PLUS247^TM

(IXSX)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MW

C (TAB)

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C, limited by leads

T_C= 90°C

TO-264 AA

(IXSK)

T_C= 25°C, 1 ms

150

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 22 W

Clamped inductive load, L = 30 mH

I_CM= 80

@ 0.8 V_CES

t_SC

(SCSOA)

V_GE= 15 V, V_CE= 360 V, T_J= 125°C

R_G= 22 W, non repetitive

G = Gate,

C = Collector,

TAB = Collector

E = Emitter,

P_C

T_C= 25°C

280

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

• Internationalstandardpackages

• Guaranteed Short Circuit SOA

capability

M_d

Mountingtorque

(TO-264)

0.9/6 Nm/lb.in.

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

• High frequency IGBT and anti-

parallel FRED in one package

• Latest generation HDMOS^TMprocess

• MOS Gate turn-on

Weight

Symbol

TO-264

PLUS247

- drivesimplicity

• FastRecovery,lowleakageEpitaxial

Diode

- soft recovery with low I_RM

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

BV_CES

V_GE(th)

I_C= 1 mA, V_GE= 0 V

I_C= 4 mA, V_CE= V_GE

600

• Uninterruptiblepowersupplies(UPS)

• Switch-modeandresonant-mode

powersupplies

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 150°C

650

Advantages

• PLUS 247^TMpackage for clip or spring

mounting

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

• Space savings (two devices in one

package)

• Reduces assembly time and cost

V_CE(sat)

I_C= I_C90, V_GE= 15 V

2.5

IXYS reserves the right to change limits, test conditions, and dimensions.

98574A(7/00)

1 - 2

中文翻译

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IXSK40N60CD1 替代型号

型号	品牌	替代类型	描述	数据表
IXXK100N60C3H1	IXYS	类似代替	XPTTM 600V GenX3TM w/ Diode

与IXSK40N60CD1相关器件

型号	品牌	获取价格	描述	数据表
IXSK50N60AU1	IXYS	获取价格	IGBT with Diode
IXSK50N60BD1	IXYS	获取价格	IGBT with Diode
IXSK50N60BU1	IXYS	获取价格	IGBT with Diode
IXSK80N60B	IXYS	获取价格	High Current IGBT Short Circuit SOA Capability
IXSM17N100	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 17A I(C) \| TO-204
IXSM17N100A	IXYS	获取价格	Insulated Gate Bipolar Transistor, 17A I(C), 1000V V(BR)CES, N-Channel
IXSM20N60	IXYS	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-204AE, TO-204AE,
IXSM20N60A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 40A I(C) \| TO-204AE
IXSM25N100	IXYS	获取价格	Low VCE(sat) IGBT, High Speed IGBT
IXSM25N100A	IXYS	获取价格	Low VCE(sat) IGBT, High Speed IGBT

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