是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOT-227 |
包装说明: | SOT-227B, 4 PIN | 针数: | 4 |
Reach Compliance Code: | compliant | 风险等级: | 5.81 |
最大集电极电流 (IC): | 38 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE | JESD-30 代码: | R-PUFM-X4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | NICKEL | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 400 ns | 标称接通时间 (ton): | 80 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXSN40N60AU1 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | SOT-227B | |
IXSN50N100AU1 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 53A I(C) | SOT-227B | |
IXSN50N120AU1 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 75A I(C) | SOT-227B | |
IXSN50N60BD2 | IXYS |
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Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, SOT-227B, 4 PIN | |
IXSN50N60BD3 | IXYS |
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Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, SOT-227B, 4 PIN | |
IXSN50N60U1 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 53A I(C) | SOT-227B | |
IXSN51N60AU1 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 53A I(C) | SOT-227B | |
IXSN52N60AU1 | IXYS |
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IGBT with Diode Combi Pack - Short Circuit SOA Capability | |
IXSN55N100U1 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 61A I(C) | SOT-227B | |
IXSN55N120 | IXYS |
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High Voltage IGBT |