5秒后页面跳转
捷配首页

Datasheet > 暂无类别数据> IXSH35N100A
IXSH35N100A PDF预览

IXSH35N100A

更新时间： 2024-11-05 21:55:11
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
4页 82K
描述
High speed IGBT

阅读下载

中文翻译

获取价格

IXSH35N100A 数据手册

 浏览型号IXSH35N100A的Datasheet PDF文件第2页浏览型号IXSH35N100A的Datasheet PDF文件第3页浏览型号IXSH35N100A的Datasheet PDF文件第4页 
High speed IGBT  
IXSH 35N100A VCES  
IXSM 35N100A IC25  
= 1000 V  
= 70 A  
VCE(sat) = 3.5 V  
Short Circuit SOA Capability  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD (IXSH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
70  
35  
A
A
A
TO-204 AE (IXSM)  
TC = 90°C  
TC = 25°C, 1 ms  
140  
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 2.7 W  
Clamped inductive load, L = 30 mH  
ICM = 70  
@ 0.8 VCES  
A
tSC  
(SCSOA)  
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C  
RG = 22 W, non repetitive  
10  
ms  
W
C
PC  
TC = 25°C  
300  
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
●
Internationalstandardpackages  
Guaranteed Short Circuit SOA  
capability  
●
Weight  
TO-204 = 18 g, TO-247 = 6 g  
●
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Low VCE(sat)  
- for low on-state conduction losses  
Highcurrenthandlingcapability  
MOS Gate turn-on  
●
●
- drive simplicity  
Fast Fall Time for switching speeds  
up to 20 kHz  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
●
Applications  
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
IC = 4 mA, VCE = VGE  
1000  
5
V
V
●
AC motor speed control  
Uninterruptiblepowersupplies(UPS)  
8
●
●
Welding  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250 mA  
mA  
1
Advantages  
Easy to mount with 1 screw (TO-247)  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
3.5  
●
(isolatedmountingscrewhole)  
High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
●
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
91545F(12/96)  
1 - 4  
1234

中文翻译

下载PDF

IXSH35N100A 替代型号

型号 品牌 替代类型 描述 数据表
HGTG20N60A4D ONSEMI

功能相似

 600V，SMPS IGBT
HGT1S10N120BNST ONSEMI

功能相似

 IGBT，1200V，NPT
IRG4PH50UDPBF INFINEON

功能相似

 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与IXSH35N100A相关器件

型号 品牌 获取价格 描述 数据表
IXSH35N120A IXYS

获取价格

 		High Voltage, High speed IGBT
IXSH35N120AU1 IXYS

获取价格

 		Insulated Gate Bipolar Transistor, 70A I(C), N-Channel, TO-247AD,
IXSH35N120B IXYS

获取价格

 		IGBT
IXSH35N120BD1 IXYS

获取价格

 		Insulated Gate Bipolar Transistor, 70A I(C), N-Channel, TO-247AD,
IXSH35N135A ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 1.35KV V(BR)CES | 70A I(C) | TO-247AD
IXSH35N140A IXYS

获取价格

 		High Voltage, High speed IGBT - Short Circuit SOA Capability
IXSH40N60 IXYS

获取价格

 		High Speed IGBT
IXSH40N60A IXYS

获取价格

 		Low VCE(sat) IGBT, High Speed IGBT
IXSH40N60B IXYS

获取价格

 		High Speed IGBT
IXSH45N100 IXYS

获取价格

 		Low VCE(sat) IGBT - Short Circuit SOA Capability

与IXSH35N100A相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证