5秒后页面跳转
IXSH40N60A PDF预览

IXSH40N60A

更新时间: 2024-11-08 22:47:59
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
6页 95K
描述
Low VCE(sat) IGBT, High Speed IGBT

IXSH40N60A 数据手册

 浏览型号IXSH40N60A的Datasheet PDF文件第2页浏览型号IXSH40N60A的Datasheet PDF文件第3页浏览型号IXSH40N60A的Datasheet PDF文件第4页浏览型号IXSH40N60A的Datasheet PDF文件第5页浏览型号IXSH40N60A的Datasheet PDF文件第6页 
VCES  
IC25 VCE(sat)  
Low VCE(sat) IGBT  
High Speed IGBT  
IXSH/IXSM 40 N60  
IXSH/IXSM 40 N60A  
600 V 75 A 2.5 V  
600 V 75 A 3.0 V  
Short Circuit SOA Capability  
TO-247 AD (IXSH)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
75  
40  
A
A
A
TO-204 AE (IXSM)  
TC = 90°C  
TC = 25°C, 1 ms  
150  
SSOA  
V
GE= 15 V, TJ = 125°C, RG = 2.7 Ω  
ICM = 80  
A
(RBSOA)  
Clamped inductive load, L = 30 µH  
@ 0.8 VCES  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 360 V, TJ = 125°C  
RG = 22 Ω, non repetitive  
10  
µs  
C
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
PC  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
International standard packages  
Guaranteed Short Circuit SOA  
capability  
Weight  
TO-204 = 18 g, TO-247 = 6g  
Low VCE(sat)  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- for low on-state conduction losses  
High current handling capability  
MOS Gate turn-on  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
- drive simplicity  
Fast Fall Time for switching speeds  
up to 20 kHz  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
600  
4
V
V
Applications  
IC = 4 mA, VCE = VGE  
7
AC motor speed control  
Uninterruptible power supplies (UPS)  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
50 µA  
mA  
Welding  
1
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
Advantages  
Easy to mount with 1 screw (TO-247)  
VCE(sat)  
IC = IC90, VGE = 15 V  
40N60  
40N60A  
2.5  
3.0  
V
V
(isolated mounting screw hole)  
High power density  
© IXYS Corporation. All rights reserved.  
91546F (4/96)  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYS reserves the right to change limits, test conditions and dimensions.  

与IXSH40N60A相关器件

型号 品牌 获取价格 描述 数据表
IXSH40N60B IXYS

获取价格

High Speed IGBT
IXSH45N100 IXYS

获取价格

Low VCE(sat) IGBT - Short Circuit SOA Capability
IXSH45N120 IXYS

获取价格

High Voltage, Low VCE(sat) IGBT
IXSH45N120B IXYS

获取价格

High Voltage IGBT S Series - Improved SCSOA Capability
IXSH50N60B IXYS

获取价格

Short Circuit SOA Capability
IXSH50N60BS ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247SMD
IXSK30N60BD1 IXYS

获取价格

High Speed IGBT with Diode
IXSK30N60CD1 IXYS

获取价格

Short Circuit SOA Capability
IXSK35N120AU1 IXYS

获取价格

High Voltage IGBT with Diode
IXSK35N120BD1 IXYS

获取价格

HIGH VOLTAGE IGBT WITH DIODE