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IXGH32N50B PDF预览

IXGH32N50B

更新时间: 2024-11-17 22:47:59
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
2页 54K
描述
HiPerFAST IGBT

IXGH32N50B 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-247AD包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.68其他特性:FAST
外壳连接:COLLECTOR最大集电极电流 (IC):60 A
集电极-发射极最大电压:500 V配置:SINGLE
最大降落时间(tf):150 ns门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):120 ns标称接通时间 (ton):25 ns
Base Number Matches:1

IXGH32N50B 数据手册

 浏览型号IXGH32N50B的Datasheet PDF文件第2页 
Preliminary Data Sheet  
HiPerFASTTM IGBT  
IXGH32N50B  
IXGH32N50BS  
VCES  
IC25  
= 500 V  
= 60 A  
VCE(sat) = 2.0 V  
tfi  
= 80 ns  
TO-247 SMD  
(32N50BS)  
Symbol  
TestConditions  
Maximum Ratings  
C (TAB)  
G
TO-247 AD  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
500  
500  
V
V
E
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
ICM  
TC = 25°C  
60  
32  
A
A
A
TC = 90°C  
TAB)  
TC = 25°C, 1 ms  
120  
C
E
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 33 Ω  
ICM = 64  
@ 0.8 VCES  
A
Clamped inductive load, L = 100 µH  
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
l
International standard packages  
JEDEC TO-247 SMD surface  
mountable and JEDEC TO-247 AD  
High current handling capability  
Newest generation HDMOSTM process  
MOS Gate turn-on  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
6
4
g
g
TO-247 SMD  
l
l
l
- drive simplicity  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
PFC circuits  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
l
l
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
500  
2.5  
V
V
l
5
l
l
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
µA  
mA  
power supplies  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
l
High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
2.0  
l
Very fast switching speeds for high  
frequency applications  
© 1997 IXYS All rights reserved  
95564A(4/97)  

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