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IXGH30N120C3H1 PDF预览

IXGH30N120C3H1

更新时间: 2024-11-18 11:14:07
品牌 Logo 应用领域
IXYS 晶体晶体管功率控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
6页 181K
描述
GenX3 1200V IGBT

IXGH30N120C3H1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.63
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):48 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):415 ns标称接通时间 (ton):60 ns
Base Number Matches:1

IXGH30N120C3H1 数据手册

 浏览型号IXGH30N120C3H1的Datasheet PDF文件第2页浏览型号IXGH30N120C3H1的Datasheet PDF文件第3页浏览型号IXGH30N120C3H1的Datasheet PDF文件第4页浏览型号IXGH30N120C3H1的Datasheet PDF文件第5页浏览型号IXGH30N120C3H1的Datasheet PDF文件第6页 
Preliminary Technical Information  
GenX3TM 1200V IGBT  
IXGH30N120C3H1  
VCES  
IC100  
= 1200V  
= 24A  
VCE(sat) 4.2V  
High speed PT IGBTs for  
10-50kHz Switching  
tfi(typ)  
= 42ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
IC25  
IC100  
ICM  
TC = 25°C  
48  
24  
A
A
A
TAB  
C
E
TC = 100°C  
TC = 25°C, 1ms  
115  
IA  
TC = 25°C  
TC = 25°C  
20  
A
EAS  
250  
mJ  
G = Gate  
E = Emitter  
C
= Collector  
SSOA  
(RBSOA)  
V
GE= 15V, TJ = 125°C, RG = 5Ω  
ICM = 60  
A
V
TAB = Collector  
Clamped Inductive Load  
@VCE 1200  
PC  
TC = 25°C  
250  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
-55 ... +150  
z Optimized for Low Conduction and  
Switching Losses  
Md  
Mounting Torque  
1.13/10  
Nm/lb.in.  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
z Square RBSOA  
z Anti-Parallel Ultra Fast Diode  
z Avalanche Rated  
z International Standard Package  
Weight  
6
g
Advantages  
z High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z Low Gate Drive Requirement  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES VGE= 0V  
V
V
Applications  
5.0  
z
AC Motor Speed Control  
DC Servo and Robot Drives  
DC Choppers  
Uninterruptible Power Supplies (UPS)  
100 μA  
z
TJ = 125°C  
TJ = 125°C  
1.5 mA  
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
z
VCE(sat)  
IC = 24A, VGE = 15V, Note 2  
3.6  
3.2  
4.2  
V
V
Switch-Mode and Resonant-Mode  
Power Supplies  
DS100123(03/09)  
© 2009 IXYS CORPORATION, All rights reserved  

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