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IXGH31N60U1 PDF预览

IXGH31N60U1

更新时间: 2024-11-05 22:45:35
品牌 Logo 应用领域
IXYS 晶体二极管晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
2页 50K
描述
Ultra-Low VCE(sat) IGBT with Diode

IXGH31N60U1 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant风险等级:5.88
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):40 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):1100 ns
门极发射器阈值电压最大值:5.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:150 W
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):2550 ns标称接通时间 (ton):210 ns
VCEsat-Max:1.8 VBase Number Matches:1

IXGH31N60U1 数据手册

 浏览型号IXGH31N60U1的Datasheet PDF文件第2页 
Ultra-Low VCE(sat)  
IGBT with Diode  
IXGH 31N60U1 VCES  
IC25  
= 600 V  
= 40 A  
VCE(sat) = 1.8 V  
Combi Pack  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
40  
31  
80  
A
A
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 90°C  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load, L = 100 µH  
ICM = 62  
@ 0.8 VCES  
A
Features  
l
International standard package  
JEDEC TO-247 AD  
IGBT and anti-parallel FRED in one  
package  
2nd generation HDMOSTM process  
Low VCE(sat)  
PC  
TC = 25°C  
150  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
l
TJM  
Tstg  
l
l
-55 ... +150  
- for minimum on-state conduction  
Md  
Mounting torque (M3)  
1.13/10 Nm/lb.in.  
losses  
MOS Gate turn-on  
- drive simplicity  
Fast RecoveryEpitaxial Diode (FRED)  
- soft recovery with low IRM  
Weight  
6
g
l
l
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
l
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
l
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
l
l
Switch-mode and resonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 750 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
V
5.5  
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
500 µA  
mA  
l
Space savings (two devices in one  
package)  
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Reduces assembly time and cost  
High power density  
8
l
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
1.8  
l
VCE(sat)  
IC = IC90, VGE = 15 V  
V
l
92798D (3/96)  
© 1996 IXYS All rights reserved  

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