GenX3TM 1200V
IGBTs
VCES = 1200V
IC110 = 32A
VCE(sat) ≤ 2.35V
IXGH32N120A3
IXGT32N120A3
Ultra-Low Vsat PT IGBTs for
up to 3 kHz Switching
TO-268 (IXGT)
Symbol
Test Conditions
Maximum Ratings
G
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
E
TJ = 25°C to 150°C, RGE = 1MΩ
C (Tab)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TO-247 (IXGH)
IC25
IC110
ICM
TC = 25°C
75
32
A
A
A
TC = 110°C
TC = 25°C, 1ms
230
G
IA
EAS
TC = 25°C
TC = 25°C
20
A
C
C (Tab)
E
120
mJ
SSOA
(RBSOA)
PC
VGE= 15V, TJ = 125°C, RG = 20Ω
Clamped Inductive Load
TC = 25°C
ICM = 150
VCE ≤ 0.8 • VCES
300
A
G = Gate
E = Emitter
C
= Collector
Tab = Collector
W
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
-55 ... +150
Features
TL
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z
Optimized for Low Conduction Losses
International Standard Packages
TSOLD
z
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Weight
TO-247
TO-268
6.0
4.0
g
g
Advantages
z
High Power Density
Low Gate Drive Requirement
z
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25°C, Unless Otherwise Specified)
Min.
1200
3.0
Typ.
Max.
z
Power Inverters
Capacitor Discharge
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
z
z
5.0
z
50 μA
z
TJ = 125°C
1 mA
z
z
IGES
VCE = 0V, VGE = ±20V
±100 nA
z
z
VCE(sat)
IC = IC110, VGE = 15V, Note 1
2.35
V
V
Lamp Ballasts
z
Inrush Current Protection Circuits
IC = 400A, VGE = 30V, Note 1
11
DS99608C(03/11)
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