Datasheet > IXGH30N60C3D1

IXGH30N60C3D1

更新时间： 2024-11-19 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	291K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGH30N60C3D1 数据手册

GenX3^TM600V IGBTs

w/ Diode

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 600V

= 30A

≤ 3.0V

= 47ns

IXGH30N60C3D1

IXGT30N60C3D1*

*Obsolete Part Number

High-Speed PT IGBTs for

40-100 kHz Switching

TO-268 (IXGT)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1MΩ

C (Tab)

V_GES

V_GEM

Continuous

Transient

± 20

± 30

TO-247 (IXGH)

I_C25

I_C110

I_F110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

150

SSOA

_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 60

C (Tab)

(RBSOA)

Clamped Inductive Load

@ ≤ V_CES

P_C

T_C= 25°C

220

G = Gate

= Collector

E = Emitter

Tab = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

T_L

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Features

T_SOLD

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

^zOptimized for Low Switching Losses

^zSquare RBSOA

^zAnti-Parallel Ultra Fast Diode

^zInternational Standard Packages

Weight

TO-268

TO-247

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.5

Applications

V_CE= V_CES, V_GE= 0V

75 μA

1 mA

^zHigh Frequency Power Inverters

^zUPS

T_J= 125°C

^zMotor Drives

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^zSMPS

V_CE(sat)

I_C= 20A, V_GE= 15V, Note 1

2.6

1.8

3.0

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

DS100013B(05/11)

12 3 4 5 6 7 8

中文翻译

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