5秒后页面跳转
IXGH30N60C3C1 PDF预览

IXGH30N60C3C1

更新时间: 2024-11-19 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 346K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGH30N60C3C1 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.64
Base Number Matches:1

IXGH30N60C3C1 数据手册

 浏览型号IXGH30N60C3C1的Datasheet PDF文件第2页浏览型号IXGH30N60C3C1的Datasheet PDF文件第3页浏览型号IXGH30N60C3C1的Datasheet PDF文件第4页浏览型号IXGH30N60C3C1的Datasheet PDF文件第5页浏览型号IXGH30N60C3C1的Datasheet PDF文件第6页浏览型号IXGH30N60C3C1的Datasheet PDF文件第7页 
GenX3TM 600V IGBTs  
w/ SiC Anti-Parallel  
Diode  
VCES = 600V  
IC110 = 30A  
VCE(sat) 3.0V  
tfi(typ) = 47ns  
IXGA30N60C3C1*  
IXGP30N60C3C1  
IXGH30N60C3C1  
*Obsolete Part Number  
TO-263 AA (IXGA)  
High-Speed PT IGBTs for  
40 - 100kHz Switching  
G
E
C(Tab)  
Symbol Test Conditions  
Maximum Ratings  
TO-220AB(IXGP)  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
C(Tab)  
E
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
60  
30  
13  
A
A
A
A
TO-247(IXGH)  
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
150  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 60  
A
(RBSOA)  
Clamped Inductive Load  
@ VCES  
G
C
E
C(Tab)  
PC  
TC = 25°C  
220  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Emitter  
D
= Collector  
TJM  
Tstg  
Tab = Collector  
-55 ... +150  
Features  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
TSOLD  
Optimized for Low Switching Losses  
SquareRBSOA  
Anti-Parallel Schottky Diode  
International Standard Packages  
Md  
Mounting Torque (TO-220 & TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.5  
V
High Frequency Power Inverters  
UPS  
VCE = VCES, VGE = 0V  
25 μA  
300 μA  
TJ = 125°C  
TJ = 125°C  
MotorDrives  
SMPS  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
PFCCircuits  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
2.6  
1.8  
3.0  
V
V
BatteryChargers  
WeldingMachines  
LampBallasts  
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100142B(05/11)  

与IXGH30N60C3C1相关器件

型号 品牌 获取价格 描述 数据表
IXGH30N60C3D1 IXYS

获取价格

GenX3 600V IGBT with Diode
IXGH30N60C3D1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGH30N60U1 ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-247AD
IXGH31N60 IXYS

获取价格

Ultra-Low VCE(sat) IGBT
IXGH31N60D1 IXYS

获取价格

Ultra-Low V IGBT with Diode
IXGH31N60U1 IXYS

获取价格

Ultra-Low VCE(sat) IGBT with Diode
IXGH32N100A3 IXYS

获取价格

GenX3 1000V IGBT
IXGH32N120A3 IXYS

获取价格

GenX3 1200V
IXGH32N120A3 LITTELFUSE

获取价格

IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对
IXGH32N170 IXYS

获取价格

High Voltage IGBT