Datasheet > IXGH30N60C2

IXGH30N60C2

更新时间： 2024-11-22 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关电动机控制双极性晶体管
页数	文件大小	规格书
6页	659K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

获取价格

数据手册

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IXGH30N60C2 数据手册

HiPerFAST^TMIGBT

V_CES

I_C25

= 600 V

= 70 A

IXGH 30N60C2

IXGT 30N60C2

V_CE(sat)= 2.7 V

t_fityp

C2-Class High Speed IGBTs

= 32 ns

TO-268 (IXGT)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

600

C (TAB)

V_GES

V_GEM

Continuous

Transient

I_C25

I_C110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

T_C= 25°C, 1 ms

150

TO-247(IXGH)

C (TAB)

SSOA

(RBSOA)

P_C

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

Clamped inductive load @ ≤ 600 V

T_C= 25°C

I_CM= 60

190

G = Gate,

C = Collector,

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

E = Emitter,

TAB = Collector

Features

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10s

300

°C

Very high frequency IGBT

Square RBSOA

250

°C

High current handling capability

MOS Gate turn-on

M_d

Mounting torque (M3) (TO-247)

1.13/10Nm/lb.in.

Weight

TO-247

TO-268

- drive simplicity

Applications

PFC circuits

Uninterruptible power supplies (UPS)

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Switched-mode and resonant-mode

power supplies

AC motor speed control

DC servo and robot drives

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

2.5

5.0

DC choppers

V_CE= V

T = 25°C

µA

V_GE= 0^CV^ES

T_J^J= 150°C

100

2.7

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= 24 A, V_GE= 15 V

V_CE(sat)

T = 25°C

T^J_J= 25°C

2.0

DS99168A(01/05)

12 3 4 5 6

中文翻译

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与IXGH30N60C2相关器件

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IXGH30N60C2D1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGH30N60C3	IXYS	获取价格	GenX3 600V IGBT
IXGH30N60C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH30N60C3C1	IXYS	获取价格	GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGH30N60C3C1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH30N60C3D1	IXYS	获取价格	GenX3 600V IGBT with Diode
IXGH30N60C3D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH30N60U1	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 50A I(C) \| TO-247AD
IXGH31N60	IXYS	获取价格	Ultra-Low VCE(sat) IGBT
IXGH31N60D1	IXYS	获取价格	Ultra-Low V IGBT with Diode