Datasheet > IXGH30N60B2D1

IXGH30N60B2D1

更新时间： 2024-11-22 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	584K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGH30N60B2D1 数据手册

Advance Technical Data

HiPerFAST^TMIGBT

IXGH 30N60B2D1

IXGT 30N60B2D1

V_CES

I_C25

= 600 V

= 70 A

V_CE(sat)< 1.8 V

t_fityp= 82 ns

Optimized for 10-25 KHz hard

switching and up to 150 KHz

resonant switching

Symbol

Test Conditions

Maximum Ratings

TO-247AD(IXGH)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

C (TAB)

V_GES

V_GEM

Continuous

Transient

I_C25

I_C110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

TO-268(IXGT)

T_C= 25°C, 1 ms

150

SSOA

(RBSOA)

P_C

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

Clamped inductive load @ ≤ 600 V

T_C= 25°C

I_CM= 60

C (TAB)

190

T_J

-55 ... +150

150

°C

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

T_JM

T_stg

-55 ... +150

Features

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Medium frequency IGBT

Square RBSOA

High current handling capability

MOS Gate turn-on

M_d

Mounting torque (M3) (TO-247)

1.13/10Nm/lb.in.

Weight

TO-247

TO-268

- drive simplicity

Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

PFC circuits

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

2.5

5.0

power supplies

AC motor speed control

DC servo and robot drives

DC choppers

V_CE= V_CES

V_GE= 0 V

T_J= 25°C

200

µA

T_J= 150°C

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= 24 A, V_GE= 15 V

100

1.8

V_CE(sat)

T_J= 25°C

DS99134A(04/04)

12 3 4 5 6 7

中文翻译

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与IXGH30N60B2D1相关器件

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