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IXFK43N60 PDF预览

IXFK43N60

更新时间: 2024-11-04 22:41:15
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HiPerFET Power MOSFET

IXFK43N60 数据手册

 浏览型号IXFK43N60的Datasheet PDF文件第2页 
ADVANCEINFORMATION  
HiPerFETTM  
VDSS  
ID25  
RDS(on)  
trr  
Power MOSFET  
IXFN 43N60 600V 43A  
IXFN 40N60 600V 40A  
IXFK 43N60 600V 43A  
IXFK 40N60 600V 40A  
0.13W 200ns  
0.15W 200ns  
0.13W 200ns  
0.15W 200ns  
Single MOSFET Die  
TO-264 AA (IXFK)  
Symbol  
VDSS  
TestConditions  
MaximumRatings  
IXFK IXFK IXFN  
IXFN  
43N60 40N60  
43N60 40N60  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C  
600  
600  
600  
600  
V
V
G
D (TAB)  
VDGR  
D
S
VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
V
V
miniBLOC, SOT-227 B (IXFN)  
VGSM  
ID25  
E153432  
S
TC = 25°C  
TC = 25°C  
TC = 25°C  
43  
172  
43  
40  
160  
40  
43  
172  
43  
40  
160  
40  
A
A
A
G
IDM‚  
IAR  
EAR  
TC = 25°C  
60  
5
60  
5
mJ  
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
V/ns  
D
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
560  
600  
W
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
· Internationalstandardpackages  
· Encapsulating epoxy meets  
UL94V-0,flammabilityclassification  
· miniBLOC withAluminiumnitride  
isolation  
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
N/A  
°C  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
N/A  
N/A  
2500  
3000  
V~  
V~  
Md  
Mountingtorque  
Terminalconnectiontorque  
0.9/6  
N/A  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
· Low RDS (on) HDMOSTM process  
· Rugged polysilicon gate cell structure  
· Unclamped Inductive Switching (UIS)  
rated  
Weight  
10  
30  
g
· Low package inductance  
· Fast intrinsic Rectifier  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
Min. Max.  
· DC-DC converters  
· Synchronousrectification  
· Battery chargers  
· Switched-modeandresonant-mode  
powersupplies  
· DC choppers  
· Temperatureandlightingcontrols  
· Low voltage relays  
(TJ = 25°C, unless otherwise specified)  
VDSS  
VGH(th)  
VGS= 0 V, ID = 3mA  
VDS = VGS, ID = 8mA  
600  
2
V
V
4
IGSS  
IDSS  
VGS= ±20 VGE = 0  
±200  
nA  
VDS= 0.8 • VDSS  
VGS= 0 V  
V
TJ = 25 °C  
TJ = 125 °C  
400  
2
mA  
mA  
Advantages  
RDS(on) VGS= 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms,  
43N60  
40N60  
0.13  
0.15  
W
W
· Easy to mount  
· Space savings  
· High power density  
duty cycle d £ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97503A(7/97)  
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