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IXFK44N80P PDF预览

IXFK44N80P

更新时间: 2024-11-06 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 259K
描述
功能与特色: 优点: 应用:

IXFK44N80P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.68Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3400 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (ID):44 A
最大漏源导通电阻:0.19 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFK44N80P 数据手册

 浏览型号IXFK44N80P的Datasheet PDF文件第2页浏览型号IXFK44N80P的Datasheet PDF文件第3页浏览型号IXFK44N80P的Datasheet PDF文件第4页浏览型号IXFK44N80P的Datasheet PDF文件第5页浏览型号IXFK44N80P的Datasheet PDF文件第6页 
PolarTM  
IXFK44N80P  
IXFX44N80P  
VDSS = 800V  
ID25 = 44A  
RDS(on) 190m  
HiperFETTM  
Power MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
G
D
S
Symbol  
Test Conditions  
Maximum Ratings  
Tab  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
800  
800  
V
V
PLUS247 (IXFX)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
44  
100  
A
A
G
D
IA  
EAS  
TC = 25C  
TC = 25C  
22  
3.4  
A
J
Tab  
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
10  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
1040  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Fast Intrinsic Diode  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
Avalanche Rated  
20..120 /4.5..27  
Low RDS(on)  
Low Package Inductance  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 800μA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
800  
V
V
3.0  
5.0  
200 nA  
IDSS  
50 A  
TJ = 125C  
1.5 mA  
RDS(on)  
VGS = 10V, ID = 22A, Note 1  
190 m  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS99478F(12/18)  

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