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IXFK44N5Q PDF预览

IXFK44N5Q

更新时间: 2024-11-20 19:55:07
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 128K
描述
Transistor

IXFK44N5Q 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

IXFK44N5Q 数据手册

 浏览型号IXFK44N5Q的Datasheet PDF文件第2页 
Advanced Technical Information  
HiPerFETTM  
Power MOSFETs  
Q-CLASS  
VDSS ID25  
RDS(on)  
IXFK/IXFX 48N50Q 500 V 48 A 100 mW  
IXFK/IXFX 44N50Q 500 V 44 A 120 mW  
trr £ 250 ns  
Single MOSFET Die  
N-ChannelEnhancementMode  
AvalancheRated, LowQg  
High dV/dt, Low trr  
PLUS247TM
Symbol  
TestConditions  
Maximum Ratings  
(TAB)  
G
D
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
500  
500  
V
V
TO-264AA(IXFK)  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
44N50  
48N50  
44N50  
48N50  
44  
48  
176  
192  
48  
A
A
A
A
A
G
D
(TAB)  
S
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
2.5  
mJ  
J
Features  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
l IXYS advanced low Qg process  
l Low gate charge and capacitances  
- easier to drive  
PD  
TC = 25°C  
500  
W
- faster switching  
l International standard packages  
l Low RDS (on)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l Rated for unclamped Inductive load  
switching (UIS) rated  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
l Molding epoxies meet UL 94 V-0  
flammability classification  
Md  
Mounting torque  
TO-264  
0.4/6  
Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
l
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
l
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
l
power supplies  
DC choppers  
l AC motor control  
min.typ.  
max.  
l
VGS = 0 V, ID = 250uA  
500  
V
l
Temperature and lighting controls  
VGS(th)  
IGSS  
VDS = VGS, ID = 4mA  
2.0  
4.0 V  
VGS = ±20 V, VDS = 0  
±100 nA  
Advantages  
l
PLUS 247TM package for clip or spring  
IDSS  
VDS = VDSS  
VGS = 0 V  
100 mA  
2 mA  
mounting  
Space savings  
High power density  
TJ = 125°C  
l
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
44N50  
48N50  
120 mW  
100 mW  
l
© 2000 IXYS All rights reserved  
98612A (03/29/00)  

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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 48A I(D) | TO-264VAR