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IXFK44N50 PDF预览

IXFK44N50

更新时间: 2024-11-17 22:11:55
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 110K
描述
HiPerFET Power MOSFETs

IXFK44N50 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-264
包装说明:TO-264, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.3
其他特性:AVALANCHE RATED外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):44 A最大漏极电流 (ID):44 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264JESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:500 W最大功率耗散 (Abs):500 W
最大脉冲漏极电流 (IDM):176 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFK44N50 数据手册

 浏览型号IXFK44N50的Datasheet PDF文件第2页浏览型号IXFK44N50的Datasheet PDF文件第3页浏览型号IXFK44N50的Datasheet PDF文件第4页 
HiPerFETTM  
Power MOSFETs  
VDSS  
ID25  
RDS(on)  
IXFK / IXFN 44 N50  
IXFK / IXFN 48 N50  
500V 44 A 0.12 Ω  
500V 48 A 0.10 Ω  
trr 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
TO-264 AA  
Symbol  
TestConditions  
MaximumRatings  
(IXFK)  
IXFK  
IXFN  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
500  
500  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
G
D
(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
V
V
S
VGSM  
ID25  
TC = 25°C  
44N50  
48N50  
44  
48  
44  
48  
A
A
miniBLOC, SOT-227 B (IXFN)  
E153432  
IDM  
TC = 25°C,  
pulse width limited by TJM  
44N50  
48N50  
176  
192  
176  
192  
A
A
S
G
D
IAR  
TC = 25°C  
TC = 25°C  
24  
30  
5
24  
30  
5
A
EAR  
mJ  
G
S
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
V/ns  
S
D
S
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
500  
520  
W
TJ  
-55 ... +150  
150  
-55 ... +150  
300  
°C  
°C  
°C  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
TJM  
Tstg  
Features  
TL  
1.6 mm (0.063 in) from case for 10 s  
-
°C  
Internationalstandardpackages  
VISOL  
50/60 Hz, RMS  
ISOL 1 mA  
t = 1 min  
t = 1 s  
-
-
2500  
3000  
V~  
V~  
Molding epoxies meet UL94V-0  
flammabilityclassification  
I
SOT-227BminiBLOCwithaluminium  
nitrideisolation  
Low RDS (on) HDMOSTM process  
Md  
Mountingtorque  
Terminalconnectiontorque  
0.9/6  
-
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Unclamped Inductive Switching (UIS)  
rated  
Fast intrinsic rectifier  
Weight  
Symbol  
10  
30  
g
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Applications  
min. typ. max.  
DC-DC converters  
Synchronousrectification  
Battery chargers  
Switched-modeandresonant-mode  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 8 mA  
500  
2
V
V
VGS(th)  
4
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
400 µA  
powersupplies  
DC choppers  
Temperatureandlightingcontrols  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
44N50  
48N50  
0.12  
0.10  
Advantages  
Easy to mount  
Pulse test, t 300 µs, duty cycle d 2 %  
Space savings  
High power density  
93001I (07/00)  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
C1 - 184  

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