Datasheet > IXFK44N50F_09

IXFK44N50F_09

更新时间： 2024-11-05 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	125K
描述
HiPerRF Power MOSFETs F-Class: MegaHertz Switching

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中文翻译

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数据手册

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IXFK44N50F_09 数据手册

HiPerRF^TM

Power MOSFETs

F-Class: MegaHertz Switching

V_DSS= 500V

I_D25= 44A

IXFK44N50F

IXFX44N50F

R_DS(on)≤ 120mΩ

t_rr

≤ 250ns

Single MOSFET Die

TO-264 (IXFK)

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g, Low Intrinsic R_g

High dV/dt, Low t_rr

Tab

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_DGR

PLUS247 (IXFX)

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

T_C= 25°C

184

Tab

E_AR

E_AS

T_C= 25°C

G = Gate

S = Source

= Drain

2.5

Tab = Drain

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

500

Features

T_J

- 55 ... +150

150

°C

T_JM

T_stg

^zRF Capable MOSFETs

^zDouble Metal Process for Low Gate

Resistance

- 55 ... +150

T_L

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

^zAvalanche Rated

T_SOLD

^zLow Package Inductance

^zFast Intrinsic Rectifier

M_d

F_C

Mounting Torque

Mounting Force

(TO-264)

(TO-247)

1.13/10

20..120/4.5..27

Nm/lb.in.

Nm/lb.

Advantages

Weight

TO-264

TO-247

Space Savings

High Power Density

Applications

Symbol

Test Conditions

Characteristic Values

^zDC-DC Converters

(T_J= 25°C Unless Otherwise Specified)

Min.

500

3.0

Typ.

Max.

^zSwitch-Mode and Resonant-Mode

Power Supplies, > 500kHz Switching

^zDC Choppers

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 4mA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

T_J= 125°C

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

5.5

^z13.5 MHz Industrial Applications

^zPulse Generation

^zLaser Drivers

^zRF Amplifiers

± 100 nA

100 μA

I_DSS

R_DS(on)

120 mΩ

DS98731C(10/09)

12 3 4 5

中文翻译

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