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IXFK44N50P PDF预览

IXFK44N50P

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 172K
描述
功能与特色: 优点: 应用:

IXFK44N50P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1700 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):44 A
最大漏源导通电阻:0.14 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):110 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFK44N50P 数据手册

 浏览型号IXFK44N50P的Datasheet PDF文件第2页浏览型号IXFK44N50P的Datasheet PDF文件第3页浏览型号IXFK44N50P的Datasheet PDF文件第4页浏览型号IXFK44N50P的Datasheet PDF文件第5页浏览型号IXFK44N50P的Datasheet PDF文件第6页 
PolarTM HiperFETTM  
Power MOSFET  
VDSS = 500V  
ID25 = 44A  
RDS(on) 140m  
IXFT44N50P  
IXFH44N50P  
IXFK44N50P  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXFT)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
TO-247 (IXFH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
500  
500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25C  
44  
A
A
TO-264 (IXFK)  
TC = 25C, Pulse Width Limited by TJM  
110  
IA  
TC = 25C  
TC = 25C  
44  
A
J
EAS  
1.7  
G
D
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
V/ns  
W
658  
D (Tab)  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Fast Intrinsic Rectifier  
Avalanche Rated  
Md  
Mounting Torque (TO-247& TO-264)  
1.13/10  
Nm/lb.in  
Weight  
TO-268  
TO-247  
TO-264  
4
6
10  
g
g
g
Low RDS(ON) and QG  
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
5.0  
Applications  
          100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
25 A  
500 μA  
TJ = 125C  
DC-DC Converters  
Laser Drivers  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
140 m  
AC and DC Motor Drives  
Robotics and Servo Controls  
DS99366F(04/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  

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