5秒后页面跳转
IXFK300N20X3 PDF预览

IXFK300N20X3

更新时间: 2024-11-17 19:55:55
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 217K
描述
Power Field-Effect Transistor,

IXFK300N20X3 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:8.36Base Number Matches:1

IXFK300N20X3 数据手册

 浏览型号IXFK300N20X3的Datasheet PDF文件第2页浏览型号IXFK300N20X3的Datasheet PDF文件第3页浏览型号IXFK300N20X3的Datasheet PDF文件第4页浏览型号IXFK300N20X3的Datasheet PDF文件第5页 
Preliminary Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 200V  
ID25 = 300A  
RDS(on) 4m  
IXFK300N20X3  
IXFX300N20X3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
200  
200  
V
V
G
D
VDGR  
TJ = 25C to 150C, RGS = 1M  
Tab  
S
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
TC = 25C  
External Lead Current Limit  
300  
160  
A
A
IDM  
TC = 25C, Pulse Width Limited by TJM  
700  
A
G
D
IA  
TC = 25C  
TC = 25C  
150  
3.5  
A
J
Tab  
S
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
1250  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
V
2.5  
4.5  
V
Applications  
200 nA  
IDSS  
25 A  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
TJ = 125C  
1.5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
4 m  
Robotics and Servo Controls  
DS100844B(9/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

与IXFK300N20X3相关器件

型号 品牌 获取价格 描述 数据表
IXFK30N100Q2 IXYS

获取价格

HiPerFET Power MOSFETs Q-Class
IXFK30N100Q2_08 IXYS

获取价格

HiPerFET Power MOSFETs Q2-Class
IXFK30N110P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFK30N50Q IXYS

获取价格

HiPerFET Power MOSFETs Q-Class
IXFK320N17T2 IXYS

获取价格

GigaMOS TrenchT2 HiperFET Power MOSFET
IXFK320N17T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXFK32N100P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFK32N100P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFK32N100Q3 IXYS

获取价格

HiperFET Power MOSFETs Q3-Class
IXFK32N100X LITTELFUSE

获取价格

Power Field-Effect Transistor,