Datasheet > IXFK32N50Q_04

IXFK32N50Q_04

更新时间： 2024-11-17 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	576K
描述
HiPerFET Power MOSFETs Q-Class

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中文翻译

获取价格

数据手册

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IXFK32N50Q_04 数据手册

HiPerFET^TM

Power MOSFETs

Q-Class

V_DSSI_D25R_DS(on)

IXFK 32N50Q

IXFX 32N50Q

500 V 32 A 0.16 Ω

t_rr≤ 250 ns

N-ChannelEnhancementMode

AvalancheRated, LowQ_g,Highdv/dt

Symbol

TestConditions

Maximum Ratings

PLUS 247^TM

(IXFX)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

500

V_GS

V_GSM

Continuous

Transient

(TAB)

I_D25

I_DM

= 25°C

T_C^C= 25°C,

120

pulse width limited by T_JM

TO-264AA(IXFK)

I_AR

T_C= 25°C

E_AR

E_AS

1500

(TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_C= 25°C

416

G = Gate

D = Drain

T_J

-55 ... + 150

150

°C

S = Source

TAB = Drain

T_JM

T_stg

-55 ... + 150

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque

300

°C

M_d

1.13/10 Nm/lb.in.

Features

Weight

TO-247

TO-268

IXYS advanced low Q_gprocess

Low gate charge and capacitances

- easier to drive

- faster switching

International standard packages

Low R_{DS (on)}

Unclamped Inductive Switching (UIS)

rated

Molding epoxies meet UL 94 V-0

flammability classification

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min.

500

typ.

max.

V_DSS

V_GS= 0 V, I_D= 250 uA

V_DS= V_GS, I_D= 4 mA

V_GS(th)

2.5

4.5

Advantages

I_GSS

I_DSS

V_GS= 20 V_DC, V_DS= 0

100 nA

PLUS 247^TMpackage for clip or spring

mounting

Space savings

V_DS= V

T = 25°C

T_J^J= 125°C

100 µA

V_GS= 0^DV^SS

0.16

R_DS(on)

= 10 V, I_D= 0.5 I_D25

Ω

N^Go^Ste 1

High power density

DS98604E(01/04)

12 3 4

中文翻译

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