HiPerFETTM
Power MOSFETs
Q2-Class
VDSS
ID25
= 800 V
38 A
IXFK 38N80Q2
IXFN 38N80Q2
IXFX 38N80Q2
=
RDS(on) = 220 mΩ
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg
PreliminaryDataSheet
Symbol
TestConditions
Maximum Ratings
PLUS247TM (IXFX)
VDSS
VDGR
T
= 25°C to 150°C
800
800
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
30
40
V
V
G
D (TAB)
D
ID25
IDM
IAR
T
= 25°C
38
150
38
A
A
A
TC = 25°C, pulse width limited by TJM
TCC = 25°C
TO-264 AA (IXFK)
EAR
EAS
T
= 25°C
75
4.0
mJ
J
TCC = 25°C
G
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
20
V/ns
D (TAB)
D
S
PD
TC = 25°C
735
W
miniBLOC,SOT-227B(IXFN)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
E153432
S*
G
TL
1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300
°C
VISOL
50/60Hz, RMS t =1 min
ISOL < 1mA t = 1s
SOT-227B
2500
3000
V~
V~
S*
I
D
Md
Mounting torque
Terminal torque
TO-264
SOT-227B
0.9/8 Nm/lb.in.
1.5/13 Nm/ib.in.
* Either Source terminal can be used as
main or Kelvin source terminal
FC
Mounting force
PLUS-247 22...130/5...30 N/lb
G = Gate
D = Drain
S = Source
TAB = Drain
Weight
PLUS247
TO-264
SOT-227B
g
10
30
g
g
Features
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Symbol
TestConditions
Characteristic Values
z
z
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
z
z
VDSS
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
800
2.0
V
V
VGS(th)
4.5
miniBLOC package version with
Aluminum Nitrate isolation
IGSS
IDSS
VGS = 30 VDC, VDS = 0
200 nA
VDS = V
T = 25°C
TJJ = 125°C
50 µA
VGS = 0DVSS
2
mA
Advantages
RDS(on)
V
= 10 V, ID = 0.5 • I
220 mΩ
PuGSlse test, t ≤ 300 µs,Dd2u5 ty cycle d ≤ 2 %
z
Easy to mount
Space savings
High power density
z
z
DS99150A(09/04)
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