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IXFK38N80Q2 PDF预览

IXFK38N80Q2

更新时间: 2024-11-17 22:11:55
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 606K
描述
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R

IXFK38N80Q2 数据手册

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HiPerFETTM  
Power MOSFETs  
Q2-Class  
VDSS  
ID25  
= 800 V  
38 A  
IXFK 38N80Q2  
IXFN 38N80Q2  
IXFX 38N80Q2  
=
RDS(on) = 220 mΩ  
trr 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg  
PreliminaryDataSheet  
Symbol  
TestConditions  
Maximum Ratings  
PLUS247TM (IXFX)  
VDSS  
VDGR  
T
= 25°C to 150°C  
800  
800  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D (TAB)  
D
ID25  
IDM  
IAR  
T
= 25°C  
38  
150  
38  
A
A
A
TC = 25°C, pulse width limited by TJM  
TCC = 25°C  
TO-264 AA (IX
EAR  
EAS  
T
= 25°C  
75  
4.0  
mJ  
J
TCC = 25°C  
G
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
20  
V/ns  
D (TAB)  
D
S
PD  
TC = 25°C  
735  
W
miniBLOC,SOT-227B(IXFN)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
E153432  
S*  
G
TL  
1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300  
°C  
VISOL  
50/60Hz, RMS t =1 min  
ISOL < 1mA t = 1s  
SOT-227B  
2500  
3000  
V~  
V~  
S*  
I
D
Md  
Mounting torque  
Terminal torque  
TO-264  
SOT-227B  
0.9/8 Nm/lb.in.  
1.5/13 Nm/ib.in.  
* Either Source terminal can be used as  
main or Kelvin source terminal  
FC  
Mounting force  
PLUS-247 22...130/5...30 N/lb  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
Weight  
PLUS247  
TO-264  
SOT-227B  
g
10  
30  
g
g
Features  
z
Double metal process for low gate  
resistance  
International standard packages  
Epoxy meet UL 94 V-0, flammability  
classification  
Avalanche energy and current rated  
Fast intrinsic Rectifier  
Symbol  
TestConditions  
Characteristic Values  
z
z
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
z
z
VDSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8 mA  
800  
2.0  
V
V
VGS(th)  
4.5  
miniBLOC package version with  
Aluminum Nitrate isolation  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
200 nA  
VDS = V  
T = 25°C  
TJJ = 125°C  
50 µA  
VGS = 0DVSS  
2
mA  
Advantages  
RDS(on)  
V
= 10 V, ID = 0.5 • I  
220 mΩ  
PuGSlse test, t 300 µs,Dd2u5 ty cycle d 2 %  
z
Easy to mount  
Space savings  
High power density  
z
z
DS99150A(09/04)  
© 2004 IXYS All rights reserved  

IXFK38N80Q2 替代型号

型号 品牌 替代类型 描述 数据表
IXFX38N80Q2 IXYS

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N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R

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