Datasheet > IXFK40N50Q2

IXFK40N50Q2

更新时间： 2024-11-20 11:57:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	180K
描述
HiPerFET Power MOSFET Q2-Class

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中文翻译

获取价格

数据手册

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IXFK40N50Q2 数据手册

Preliminary Technical Information

HiPerFET^TM

PowerMOSFET

Q2-Class

V_DSS

I_D25

= 500V

= 40A

IXFK40N50Q2

R_DS(on)≤ 160mΩ

t_rr

≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q_g

Low intrinsic R_g, low t_rr

TO-264(IXFK)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_GSS

V_GSM

Continuous

Transient

±30

±40

(TAB)

G = Gate

S = Source

= Drain

I_D25

I_DM

T_C=25°C

T_C= 25°C, pulse width limited by T_JM

TAB = Drain

160

I_A

T_C=25°C

E_AS

dV/dt

P_D

T_C=25°C

2.5

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C=25°C

V/ns

Features

560

^ꢀDouble metal process for low gate

resistance

T_J

-55 ... +150

150

°C

T_JM

T_stg

^ꢀInternational standard package

^ꢀEpoxymeetUL94V-0, flammability

classification

-55 ... +150

T_L

1.6mm (0.063 in) from case for 10s

Mountingtorque

300

1.13/10

°C

Nm/lb.in.

^ꢀAvalanche energy and current rated

^ꢀFast intrinsic Rectifier

M_d

Weight

Applications

ꢀ

DC-DCconverters

Switched-mode and resonant-mode

ꢀ

power supplies, >500kHz switching

DCchoppers

Pulsegeneration

Laserdrivers

Symbol

TestConditions

Characteristic Values

ꢀ

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

ꢀ

BV_DSS

V_GS(th)

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 4mA

500

3.0

ꢀ

5.5

I_GSS

I_DSS

V_GS= ±30V, V_DS= 0V

±200 nA

25 μA

Advantages

V_DS= V_DSS

V_GS=0V

T_J= 125°C

ꢀ

Easy to mount

Spacesavings

ꢀ

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

160 mΩ

ꢀ

High power density

DS100035(08/08)

12 3 4 5

中文翻译

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