Datasheet > IXFK360N10T

IXFK360N10T

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	209K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXFK360N10T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Is Samacsys：	N	Base Number Matches：	1

IXFK360N10T 数据手册

Preliminary Technical Information

GigaMOS^TMTrench

HiperFET^TM

Power MOSFET

V_DSS= 100V

I_D25= 360A

R_DS(on)≤ 2.9mΩ

IXFK360N10T

IXFX360N10T

t_rr

≤ 130ns

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXFK)

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

100

Tab

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

PLUS247 (IXFX)

I_D25

I_L(RMS)

I_DM

T_C= 25°C (Chip Capability)

External Lead Current Limit

T_C= 25°C, Pulse Width Limited by T_JM

360

160

900

I_A

E_AS

T_C= 25°C

100

Tab

P_D

T_C= 25°C

1250

G = Gate

= Drain

dv/dt

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

V/ns

S = Source

Tab = Drain

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

Features

^zInternational Standard Packages

^zHigh Current Handling Capability

^zFast Intrinsic Diode

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in.

N/lb.

^zAvalanche Rated

20..120 /4.5..27

Low R_DS(on)

Weight

TO-264

PLUS247

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 3mA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

100

2.5

4.5

Synchronous Recification

^zDC-DC Converters

^zBattery Chargers

± 200 nA

^zSwitch-Mode and Resonant-Mode

Power Supplies

^zDC Choppers

^zAC Motor Drives

I_DSS

25 μA

2.5 mA

T_J= 150°C

R_DS(on)

V_GS= 10V, I_D= 100A, Notes 1 & 2

2.9 mΩ

^zUninterruptible Power Supplies

^zHigh Speed Power Switching

Applications

DS100210A(02/11)

12 3 4 5 6 7

中文翻译

下载PDF

与IXFK360N10T相关器件

型号	品牌	获取价格	描述	数据表
IXFK360N15T2	IXYS	获取价格	GigaMOS TrenchT2 HiperFET Power MOSFET
IXFK36N60	IXYS	获取价格	HiPerFET Power MOSFET
IXFK36N60P	IXYS	获取价格	PolarHV HiPerFET Power MOSFET
IXFK36N60P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFK36N60Q	IXYS	获取价格	Power Field-Effect Transistor, 36A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Me
IXFK38N80Q2	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
IXFK38N80Q2	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFK38N80Q2_08	IXYS	获取价格	HiPerFET Power MOSFETs Q2-Class
IXFK40N50Q2	IXYS	获取价格	HiPerFET Power MOSFET Q2-Class
IXFK40N60	IXYS	获取价格	HiPerFET Power MOSFET