Datasheet > IXFK32N80P

IXFK32N80P

更新时间： 2024-01-08 19:01:36

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	229K
描述
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中文翻译

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数据手册

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IXFK32N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFK 32N80P

IXFX 32N80P

V_DSS

I_D25

= 800 V

= 32 A

R_DS(on)≤ 270 mΩ

N-Channel Enhancement Mode

Avalanche Rated

t_rr

≤ 250 ns

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

TO-264 (IXFK)

V_DSS

V_DGR

T_J= 25° C to 150° C

800

T_J= 25° C to 150° C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuous

Transient

I_D25

I_DM

T_C=25° C

T_C= 25° C, pulse width limited by T_JM

(TAB)

I_AR

T_C=25° C

E_AR

E_AS

T_C=25° C

PLUS247 (IXFX)

2.0

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 4 Ω

V/ns

T_C=25° C

830

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

(TAB)

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

G = Gate

S = Source Tab = Drain

= Drain

M_d

Mounting torque (TO-264)

1.13/10 Nm/lb.in.

Weight

TO-264

PLUS247

Features

International standard packages

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Symbol

Test Conditions

Characteristic Values

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 8 mA

V_GS= 30 V_DC, V_DS= 0

800

3.0

5.0

200

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

1000

µA

T_J= 125° C

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

270 mΩ

High power density

DS99425E(01/06)

12 3 4 5

中文翻译

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