Datasheet > IXFK32N80Q3

IXFK32N80Q3

更新时间： 2024-11-17 19:43:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	127K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXFK32N80Q3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

IXFK32N80Q3 数据手册

HiperFET^TM

Power MOSFET

Q3-Class

V_DSS= 800V

I_D25= 32A

R_DS(on) 270m

IXFK32N80Q3

IXFX32N80Q3

t_rr

 300ns

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXFK)

Fast Intrinsic Rectifier

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

800

V_DGR

Tab

V_GSS

V_GSM

Continuous

Transient

30

40

PLUS247 (IXFX)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

I_A

E_AS

T_C= 25C

Tab

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

1000

G = Gate

S = Source

= Drain

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



Low Intrinsic Gate Resistance

Low Package Inductance

Fast Intrinsic Rectifier

Low R_DS(on)and Q_G



M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in

N/lb

20..120 /4.5..27

Weight

TO-264

PLUS247

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25C Unless Otherwise Specified)

Min.

800

3.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA



DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode



V_DS= V_GS, I_D= 4mA

V_GS= 30V, V_DS= 0V

V_DS= 0.8 • V_DSS, V_GS= 0V

6.0



200 nA

Power Supplies

DC Choppers

Temperature and Lighting Controls



I_DSS

50 A

2 mA



T_J= 125C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

270 m

DS100361B(01/14)

12 3 4 5 6

中文翻译

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