Datasheet > IXFK34N80

IXFK34N80

更新时间： 2024-11-18 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	132K
描述
功能与特色: 应用: 优点:

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中文翻译

获取价格

数据手册

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IXFK34N80 数据手册

HiPerFET^TM

Power MOSFETs

IXFK 34N80

IXFX 34N80

V_DSS= 800 V

I_D25= 34 A

R_DS(on)= 0.24 W

Single MOSFET Die

Avalanche Rated

Preliminary data sheet

t_rr£ 250 ns

PLUS 247^TM(IXFX)

Symbol

TestConditions

MaximumRatings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

800

(TAB)

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

136

TO-264 AA (IXFK)

E_AR

E_AS

T_C= 25°C

(TAB)

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

G = Gate

D = Drain

S = Source

TAB = Drain

P_D

T_J

T_C= 25°C

560

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

Features

T_L

1.6 mm (0.063 in.) from case for 10 s

300

°C

• Internationalstandardpackages

• Low R_{DS (on)}HDMOS^TMprocess

M_d

Mountingtorque

TO-264

0.9/6 Nm/lb.in.

• Ruggedpolysilicongatecellstructure

• UnclampedInductiveSwitching(UIS)

rated

Weight

PLUS 247

TO-264

• Lowpackageinductance

- easy to drive and to protect

• Fastintrinsicrectifier

Applications

• DC-DC converters

• Batterychargers

• Switched-modeandresonant-mode

powersupplies

• DC choppers

• ACmotorcontrol

Symbol

V_DSS

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_GS= 0 V, I_D= 3mA

800

3.0

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 8mA

5.0 V

• Temperatureandlightingcontrols

V_GS= ±20 V, V_DS= 0

±200nA

Advantages

• PLUS 247^TMpackage for clip or spring

mounting

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

100 mA

2 mA

• Space savings

• Highpowerdensity

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Note 1

0.24

IXYS reserves the right to change limits, test conditions, and dimensions.

98560B(6/99)

1 - 2

12 3

中文翻译

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