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IXFK360N15T2 PDF预览

IXFK360N15T2

更新时间: 2024-01-26 01:01:13
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
6页 179K
描述
GigaMOS TrenchT2 HiperFET Power MOSFET

IXFK360N15T2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-264AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.52Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:811748
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-264 (IXFK)
Samacsys Released Date:2017-07-08 11:40:10Is Samacsys:N
其他特性:AVALANCHE RATED外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):360 A最大漏极电流 (ID):360 A
最大漏源导通电阻:0.004 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1670 W最大脉冲漏极电流 (IDM):900 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFK360N15T2 数据手册

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Advance Technical Information  
GigaMOSTM TrenchT2  
HiperFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 360A  
RDS(on) 4.0mΩ  
IXFK360N15T2  
IXFX360N15T2  
trr  
150ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C (Chip Capability)  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
360  
160  
900  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
100  
TBD  
A
J
(TAB)  
PD  
TC = 25°C  
1670  
20  
W
G = Gate  
D
= Drain  
dV/dt  
IS IDM, VDD VDSS, TJ 175°C  
V/ns  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Avalanche Rated  
20..120 /4.5..27  
z
Low RDS(on)  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
150  
V
V
z
2.5  
5.0  
Synchronous Recification  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
50 μA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
z DC Choppers  
z AC Motor Drives  
IDSS  
TJ = 150°C  
5
mA  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
4.0 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100181(08/09)  

IXFK360N15T2 替代型号

型号 品牌 替代类型 描述 数据表
IXFX360N15T2 IXYS

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