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IXFK38N80Q2 PDF预览

IXFK38N80Q2

更新时间: 2024-11-06 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 212K
描述
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IXFK38N80Q2 数据手册

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HiPerFETTM  
Power MOSFETs  
Q2-Class  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
IXFK38N80Q2  
IXFN38N80Q2  
IXFX38N80Q2  
VDSS = 800V  
ID25 = 38A  
RDS(on) 220mΩ  
trr  
250ns  
TO-264 (IXFK)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
TJ = 25°C to 150°C, RGS = 1MΩ  
G
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
38  
150  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
38  
4
A
J
(TAB)  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
miniBLOC, SOT-227 B (IXFN)  
E153432  
735  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S
G
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1min  
2500  
3000  
V~  
V~  
S
IISOL 1mA  
t = 1s  
D
Md  
Mounting torque  
Terminal connection torque (SOT-227B)  
(TO-264)  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Either Source terminal S can be used as the  
Source terminal or the Kelvin Source (gate  
return) terminal.  
FC  
Mounting force  
(PLUS247) 20..120 /4.5..27  
N/lb.  
G = Gate  
D
=
Drain  
Weight  
TO-264  
PLUS247  
SOT-227B  
10  
6
30  
g
g
g
S = Source  
TAB = Drain  
Features  
• Double metal process for low gate  
resistance  
• International standard packages  
• EpoxymeetUL94V-0, flammability  
classification  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
• Avalanche energy and current rated  
• Fast intrinsic Rectifier  
• miniBLOCK package version with  
Aluminum Nitrate isolation  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 30V, VDS = 0V  
800  
V
V
3.0  
5.5  
± 200 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0V  
50  
2
μA  
mA  
• Easy to mount  
TJ = 125°C  
• Space savings  
• High power density  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
220 mΩ  
DS99150B(5/08)  
© 2008 IXYS CORPORATION,All rights reserved  

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