Datasheet > IXFK32N100P

IXFK32N100P

更新时间： 2024-11-20 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
5页	146K
描述
功能与特色: 优点: 应用:

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中文翻译

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数据手册

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IXFK32N100P 数据手册

Polar^TMPower MOSFET

HiPerFET^TM

IXFK32N100P

IXFX32N100P

V_DSS= 1000V

I_D25= 32A

R_DS(on)≤ 320mΩ

N-Channel Enhancement Mode

Avalanche Rated

t_rr

≤ 300ns

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

TO-264 (IXFK)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

(TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

I_AR

E_AS

T_C= 25°C

1.5

PLUS247 (IXFX)

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

960

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

(TAB)

G = Gate

S = Source

D = Drain

TAB = Drain

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

Features

M_d

Mounting torque

Mounting force

(IXFK)

(IXFX)

1.13/10

Nm/lb.in.

Nm/lb.

^zFast intrinsic diode

^zInternational standard packages

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

F_C

20..120/4.5..27

Weight

TO-264

TO-247

Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25°C unless otherwise specified)

Min.

Typ.

Max.

Easy to mount

Space savings

High power density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 30V, V_DS= 0V

1000

3.5

6.5

± 200 nA

Applications:

I_DSS

V_DS= V_DSS

V_GS= 0V

50 μA

2.5 mA

^zSwitched-mode and resonant mode

power supplies

T_J= 125°C

^zDC-DC Converters

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

320 mΩ

^zLaser Drivers

^zAC and DC motor controls

^zRobotics and servo controls

DS99777C(4/08)

12 3 4 5

中文翻译

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