5秒后页面跳转
IXFK320N17T2 PDF预览

IXFK320N17T2

更新时间: 2024-11-18 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 212K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能(Tc=@25oC)。 通过结合高电流额定值与紧凑的封装选择,这些尺寸更加小巧的器件能够控制更高的功率。

IXFK320N17T2 数据手册

 浏览型号IXFK320N17T2的Datasheet PDF文件第2页浏览型号IXFK320N17T2的Datasheet PDF文件第3页浏览型号IXFK320N17T2的Datasheet PDF文件第4页浏览型号IXFK320N17T2的Datasheet PDF文件第5页浏览型号IXFK320N17T2的Datasheet PDF文件第6页浏览型号IXFK320N17T2的Datasheet PDF文件第7页 
Advance Technical Information  
GigaMOSTM TrenchT2  
HiperFETTM  
Power MOSFET  
VDSS = 170V  
ID25 = 320A  
RDS(on) 5.2mΩ  
IXFK320N17T2  
IXFX320N17T2  
trr  
150ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
170  
170  
V
V
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C (Chip Capability)  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
320  
160  
800  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
100  
5
A
J
(TAB)  
PD  
TC = 25°C  
1670  
20  
W
G = Gate  
D
= Drain  
dV/dt  
IS IDM, VDD VDSS, TJ 175°C  
V/ns  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Avalanche Rated  
20..120 /4.5..27  
z
Low RDS(on)  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
170  
V
V
z
2.5  
5.0  
Synchronous Recification  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
50 μA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
z DC Choppers  
z AC Motor Drives  
IDSS  
TJ = 150°C  
5
mA  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
5.2 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100188(09/09)  

与IXFK320N17T2相关器件

型号 品牌 获取价格 描述 数据表
IXFK32N100P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFK32N100P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFK32N100Q3 IXYS

获取价格

HiperFET Power MOSFETs Q3-Class
IXFK32N100X LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFK32N50Q IXYS

获取价格

HiPerFET Power MOSFETs Q-Class
IXFK32N50Q_04 IXYS

获取价格

HiPerFET Power MOSFETs Q-Class
IXFK32N60 IXYS

获取价格

HiPerFET Power MOSFET
IXFK32N80P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFK32N80P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFK32N80Q3 IXYS

获取价格

Power Field-Effect Transistor, 32A I(D), 800V, 0.27ohm, 1-Element, N-Channel, Silicon, Met