Datasheet > IXFK30N100Q2_08

IXFK30N100Q2_08

更新时间： 2024-11-17 12:20:15

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	118K
描述
HiPerFET Power MOSFETs Q2-Class

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中文翻译

获取价格

数据手册

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IXFK30N100Q2_08 数据手册

HiPerFET^TM

Power MOSFETs

Q2-Class

V_DSS= 1000V

I_D25= 30A

IXFK30N100Q2

IXFX30N100Q2

R_DS(on)≤ 400mΩ

t_rr

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q_g

Low intrinsic R_g, low t_rr

TO-264 (IXFK)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

(TAB)

I_D25

I_DM

T_C= 25°C

120

T_C= 25°C, pulse width limited by T_JM

PLUS247 (IXFX)

I_A

E_AS

T_C= 25°C

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

735

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

(TAB)

G = Gate

S = Source

D = Drain

TAB = Drain

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

M_d

Mounting torque

Mounting force

(IXFK)

(IXFX)

1.13/10

Nm/lb.in.

N/lb.

F_C

20..120 /4.5..27

Features

Weight

TO-264

PLUS247

• Double metal process for low gate

resistance

• International standard packages

• EpoxymeetUL94V-0, flammability

classification

• Avalanche energy and current rated

• Fast intrinsic Rectifier

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Advantages

Min. Typ.

Max.

• Easy to mount

• Space savings

• High power density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

1000

3.0

5.5

V_GS= ± 30V, V_DS= 0V

± 200

I_DSS

V_DS= V_DSS

V_GS= 0V

μA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

400 mΩ

DS99160A(5/08)

12 3 4

中文翻译

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