IXFK28N60

更新时间： 2024-09-24 22:41:15

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	73K
描述
HiPerFET Power MOSFETs

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中文翻译

获取价格

数据手册

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IXFK28N60 数据手册

HiPerFET^TM

Power MOSFETs

V_DSS

I_D25

R_DS(on)

IXFH 26N60/IXFT 26N60

IXFK 28N60

600V 26 A 0.25 W

600V 28 A 0.25 W

t_rr£ 250 ns

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

Preliminary data

Symbol

TestConditions

MaximumRatings

IXFH/ IXFT

IXFK

TO-247AD(IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GS= 1 MW

(TAB)

V_GS

Continuous

Transient

±20

±30

±20

±30

V_GSM

I_D25

I_DM

I_AR

T_C= 25°C, Chip capability

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

104

112

TO-268 (D3) ( IXFT)

(TAB)

E_AR

E_AS

T_C= 25°C

1.5

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

TO-264AA(IXFK)

P_D

T_C= 25°C

360

416

T_J

-55 ... +150

150

-55 ... +150

300 300

°C

T_JM

T_stg

D (TAB)

T_L

1.6 mm (0.063 in) from case for 10 s

Mountingtorque

°C

G = Gate

S = Source

TAB = Drain

M_d

1.13/10

0.9/6 Nm/lb.in.

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Weight

Features

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

• Internationalstandardpackages

• EpoxymeetUL94V-0,flammability

classification

min. typ. max.

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Avalanche energy and current rated

• Fast intrinsic Rectifier

V_DSS

V_GS= 0 V, I_D= 250 mA

600

V_GS(th)

V_DS= V_GS, I_D= 4 mA

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

25 mA

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

• Easy to mount

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t £ 300 ms, duty cycle d £ 2 %

0.25

IXYS reserves the right to change limits, test conditions, and dimensions.

98511B(7/00)

1 - 2

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