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IXFB38N100Q2_08 PDF预览

IXFB38N100Q2_08

更新时间: 2024-11-01 11:13:59
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 126K
描述
HiPerFET Power MOSFET Q2-Class

IXFB38N100Q2_08 数据手册

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HiPerFETTM  
Power MOSFET  
Q2-Class  
VDSS = 1000V  
ID25 = 38A  
IXFB38N100Q2  
R
250mΩ  
trrDS(on) 300ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic RG  
High dV/dt, Low trr  
PLUS264TM( IXFB)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
( TAB )  
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
38  
152  
A
A
G = Gate  
S = Source  
D
= Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
38  
5
A
J
TAB = Drain  
Features  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
890  
V/ns  
W
z Double metal process for low gate  
resistance  
TJ  
-55 ... +150  
°C  
z Unclamped Inductive Switching (UIS)  
rated  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
z Low package inductance  
- easy to drive and to protect  
z Fast intrinsic rectifier  
TL  
TSOLD  
1.6 mm (0.063 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
FC  
Mounting force  
30..120/6.7..27  
10  
N / lbs  
g
Applications  
Weight  
z
DC-DC converters  
z
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
z
DC choppers  
z Pulse generation  
z Laser drivers  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
z
PLUS 264TM package for clip or spring  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ±30 V, VDS = 0V  
1000  
V
V
mounting  
Space savings  
High power density  
z
3.0  
5.5  
z
± 200 nA  
50 μA  
IDSS  
VDS = VDSS  
VGS = 0V  
TJ = 125°C  
3
mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
250 mΩ  
DS98949F(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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