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IXFB40N110Q3 PDF预览

IXFB40N110Q3

更新时间: 2024-11-02 19:35:03
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 145K
描述
Power Field-Effect Transistor,

IXFB40N110Q3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.19
Base Number Matches:1

IXFB40N110Q3 数据手册

 浏览型号IXFB40N110Q3的Datasheet PDF文件第2页浏览型号IXFB40N110Q3的Datasheet PDF文件第3页浏览型号IXFB40N110Q3的Datasheet PDF文件第4页浏览型号IXFB40N110Q3的Datasheet PDF文件第5页浏览型号IXFB40N110Q3的Datasheet PDF文件第6页 
Preliminary Technical Information  
HiperFETTM  
Power MOSFET  
Q3-Class  
VDSS = 1100V  
ID25 = 40A  
RDS(on) 260m  
IXFB40N110Q3  
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
PLUS264TM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1100  
1100  
V
V
G
D
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
Tab  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
40  
A
A
G = Gate  
D
= Drain  
S
= Source  
Tab = Drain  
100  
IA  
TC = 25C  
TC = 25C  
40  
4
A
J
EAS  
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
50  
V/ns  
W
Low Intrinsic Gate Resistance  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
1560  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting Force  
30..120/6.7..27  
10  
N/lb.  
g
High Power Density  
Easy to Mount  
Weight  
Space Savings  
Applications  
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
1100  
3.5  
Typ.  
Max.  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
6.5  
200 nA  
IDSS  
50 A  
TJ = 125C  
3 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
260 m  
DS100580A(02/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  

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