Datasheet > IXFB80N50Q2_07

IXFB80N50Q2_07

更新时间： 2022-11-10 23:09:22

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	125K
描述
HiPerFET Power MOSFETs

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数据手册

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IXFB80N50Q2_07 数据手册

HiPerFET^TM

Power MOSFETs

V_DSS= 500V

IXFB80N50Q2

I_D25

≤

80A

60mΩ

t_rr^DS(on)≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g, Low Intrinsic R_G

High dV/dt, Low t_rr

PLUS264^TM( IXFB)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

( TAB )

I_D25

I_DRMS

I_DM

T_C= 25°C

320

External lead limited

T_C= 25°C, pulse width limited by T_JM

G = Gate

D = Drain

TAB = Drain

S = Source

I_AR

E_AR

E_AS

T_C= 25°C

5.0

Features

^zDouble metal process for low gate

resistance

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

960

V/ns

^zUnclamped Inductive Switching (UIS)

rated

T_J

-55 ... +150

°C

^zLow package inductance

- easy to drive and to protect

^zFast intrinsic rectifier

T_JM

T_stg

150

-55 ... +150

°C

T_L

T_SOLD

1.6 mm (0.063 in.) from case for 10s

Plastic body for 10s

300

260

°C

Applications

F_C

Mounting force

30...120/6.7...27

N / lbs

DC-DC converters

Switched-mode and resonant-mode

power supplies, >500kHz switching

DC choppers

Weight

^zPulse generation

^zLaser drivers

Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25°C, unless otherwise specified)

Min.

Typ. Max.

PLUS 264^TMpackage for clip or spring

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 1mA

V_DS= V_GS, I_D= 8mA

V_GS= ±30 V, V_DS= 0V

500

mounting

Space savings

High power density

3.0

5.5

± 200 nA

100 μA

I_DSS

V_DS= V_DSS

V_GS= 0V

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

60 mΩ

DS98958F(07/07)

12 3 4

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