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IXFC110N10P PDF预览

IXFC110N10P

更新时间: 2024-11-02 11:13:59
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描述
PolarHV HiPerFET Power MOSFET ISOPLUS220

IXFC110N10P 数据手册

 浏览型号IXFC110N10P的Datasheet PDF文件第2页浏览型号IXFC110N10P的Datasheet PDF文件第3页浏览型号IXFC110N10P的Datasheet PDF文件第4页浏览型号IXFC110N10P的Datasheet PDF文件第5页 
PolarHVTM HiPerFET  
Power MOSFET  
IXFC 110N10P  
VDSS = 100 V  
ID25 = 60 A  
RDS(on) 17 mΩ  
ISOPLUS220TM  
trr  
150 ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
Avalanche Rated  
ISOPLUS220TM (IXFC)  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 175° C  
100  
100  
V
TJ = 25° C to 175° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
Isolated back surface  
ID25  
IDM  
TC = 25° C  
60  
A
A
TC = 25° C, pulse width limited by TJM  
250  
G = Gate  
S = Source  
D = Drain  
IAR  
TC =25° C  
60  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
40  
mJ  
J
1.0  
Features  
Silicon chip on Direct-Copper-Bond  
substrate  
l
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Low drain to tab capacitance(<35pF)  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
TC =25° C  
120  
W
l
l
l
l
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
V~  
l
Fast intrinsic Rectifier  
VISOL  
50/60 Hz, RMS t = 1 minute leads-to-tab  
2500  
FC  
Mounting Force  
11..65 / 2.5..15  
N/lb  
Applications  
l
DC-DC converters  
Battery chargers  
Weight  
2
g
l
l
Switched-mode and resonant-mode  
power supplies  
DC choppers  
AC motor control  
l
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
Easy assembly: no screws, or isolation  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
100  
V
V
l
foils required  
Space savings  
High power density  
Low collector capacitance to ground  
2.5  
5.0  
l
l
100  
nA  
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
(low EMI)  
TJ = 150° C  
RDS(on)  
VGS = 10 V, ID = 55 A  
17 mΩ  
DS99370E(03/06)  
© 2006 IXYS All rights reserved  

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