PolarHVTM HiPerFET
Power MOSFET
IXFC 110N10P
VDSS = 100 V
ID25 = 60 A
RDS(on) ≤ 17 mΩ
ISOPLUS220TM
trr
≤ 150 ns
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
ISOPLUS220TM (IXFC)
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
100
100
V
TJ = 25° C to 175° C; RGS = 1 MΩ
V
VGSS
VGSM
Continuous
Transient
20
30
V
V
G
D
S
Isolated back surface
ID25
IDM
TC = 25° C
60
A
A
TC = 25° C, pulse width limited by TJM
250
G = Gate
S = Source
D = Drain
IAR
TC =25° C
60
A
EAR
EAS
TC =25° C
TC =25° C
40
mJ
J
1.0
Features
Silicon chip on Direct-Copper-Bond
substrate
l
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
10
V/ns
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
TC =25° C
120
W
l
l
l
l
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
V~
l
Fast intrinsic Rectifier
VISOL
50/60 Hz, RMS t = 1 minute leads-to-tab
2500
FC
Mounting Force
11..65 / 2.5..15
N/lb
Applications
l
DC-DC converters
Battery chargers
Weight
2
g
l
l
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
l
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
Advantages
Easy assembly: no screws, or isolation
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
100
V
V
l
foils required
Space savings
High power density
Low collector capacitance to ground
2.5
5.0
l
l
100
nA
l
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
(low EMI)
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 55 A
17 mΩ
DS99370E(03/06)
© 2006 IXYS All rights reserved