Datasheet > IXFC12N80P

IXFC12N80P

更新时间： 2024-02-10 17:18:10

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	201K
描述
PolarHV HiPerFET Power MOSFET ISOPLUS220

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数据手册

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IXFC12N80P 数据手册

Advance Technical Information

PolarHV^TMHiPerFET

IXFC 12N80P

V_DSS= 800 V

I_D257 A

R_DS(on)≤ 0.93 mΩ

≤ 250

Power MOSFET

ISOPLUS220^TM

t_rr

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Fast Intrinsic Diode

Avalanche Rated

ISOPLUS220^TM(IXFC)

E153432

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25° C to 150° C

T_J= 25° C to 150° C; R_GS= 1 MΩ

800

V_GS

V_GSM

Continuous

Transient

Isolated back surface

D = Drain

I_D25

I_DM

T_C= 25° C

T_C= 25° C, pulse width limited by T_JM

G = Gate

I_AR

E_AR

E_AS

T_C= 25° C

1.0

S = Source

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 10 Ω

V/ns

Features

^zSilicon chip on Direct-Copper-Bond

substrate

T_C= 25° C

120

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

^zLow drain to tab capacitance(<35pF)

^zLow R_{DS (on)}HDMOS^TMprocess

^zRugged polysilicon gate cell structure

^zUnclamped Inductive Switching (UIS)

rated

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

V_ISOL

50/60 Hz, RMS, t = 1, leads-to-tab

2500

F_C

Mounting Force

11..65/2.5..15

N/lb

^zFast intrinsic Rectifier

Weight

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

Symbol

Test Conditions

Characteristic Values

power supplies

DC choppers

^zAC motor control

(T_J= 25° C unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 2.5 mA

V_GS= 30 V, V_DS= 0 V

800

3.0

5.5

Advantages

Easy assembly: no screws, or isolation

100

foils required

Space savings

High power density

Low collector capacitance to ground

I_DSS

V_DS= V_DSS

V_GS= 0 V

750

µA

T_J= 125° C

R_DS(on)

V_GS= 10 V, I_D= I_T,(Note 1)

0.93 mΩ

(low EMI)

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

DS99603E(07/06)

中文翻译

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