Datasheet > IXFB90N85X

IXFB90N85X

更新时间： 2024-11-22 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		高电压电源栅二极管
页数	文件大小	规格书
6页	192K
描述
采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件，具有业内最低的导通电阻，因此能够在高电压电源转换应用中实现高功率密度。这种器件采用电荷补偿原理和专有工艺技术开发，具有低栅

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中文翻译

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数据手册

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IXFB90N85X 数据手册

X-Class HiPerFET^TM

Power MOSFET

V_DSS= 850V

I_D25= 90A

R_DS(on) 41m

IXFB90N85X

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

PLUS264^TM

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

850

Tab

V_GSS

V_GSM

Continuous

Transient

 30

 40

G = Gate

= Drain

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

180

= Source

Tab = Drain

I_A

E_AS

T_C= 25C

P_D

T_C= 25C

1785

dv/dt

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C



Low Q_G

Avalanche Rated



Low Package Inductance

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

F_C

Mounting Force

30..120 / 6.7..27

N/lb

Advantages

Weight



High Power Density

Easy to Mount



Space Savings

Applications

Symbol

Test Conditions

Characteristic Values



Switch-Mode and Resonant-Mode

(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

Power Supplies



DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

BV_DSS

V_GS(th)

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

850



3.5

5.5



I_GSS

I_DSS

V_GS=  30V, V_DS= 0V

200 nA

V_DS= V_DSS, V_GS= 0V

50 A

T_J= 125C

5 mA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

41 m

DS10072A(11/19)

12 3 4 5 6

中文翻译

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