Datasheet > IXFB52N90P

IXFB52N90P

更新时间： 2024-11-02 05:39:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	120K
描述
Polar Power MOSFET HiPerFET

阅读下载

中文翻译

获取价格

数据手册

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IXFB52N90P 数据手册

Polar^TMPower MOSFET

HiPerFET^TM

V_DSS= 900V

I_D25= 52A

IXFB52N90P

R_DS(on)≤ 160mΩ

t_rr

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

PLUS264^TM

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

900

V_DGR

V_GSS

V_GSM

T_J= 25°C to 150°C, R_GS= 1MΩ

Continuous

900

± 30

± 40

(TAB)

Transient

I_D25

I_DM

T_C= 25°C

G = Gate

S = Source

= Drain

T_C= 25°C, Pulse Width Limited by T_JM

104

TAB = Drain

I_A

T_C= 25°C

E_AS

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

1250

V/ns

Features

T_J

-55 ... +150

150

°C

^zFast Intrinsic Diode

^zAvalanche Rated

^zLow Package Inductance

T_JM

°C

T_stg

-55 ... +150

300

°C

T_L

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

°C

T_SOLD

F_C

260

°C

Advantages

Mounting Force

30..120/6.7..27

N/lb.

Plus 264^TMPackage for Clip or Spring

Mounting

Space Savings

Weight

High Power Density

Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

900

3.5

Typ.

Max.

^zSwitched-Mode and Resonant-Mode

Power Supplies

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS,V_GS= 0V

^zDC-DC Converters

6.5

^zLaser Drivers

^zAC and DC Motor drives

^zRobotics and Servo Controls

± 200 nA

50 μA

I_DSS

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25,Note 1

160 mΩ

DS100064A(02/09)

12 3 4

中文翻译

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