IXFB132N50P3

更新时间： 2024-11-01 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	141K
描述
Polar3 HiPerFET Power MOSFET

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中文翻译

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数据手册

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IXFB132N50P3 数据手册

Advance Technical Information

Polar3^TMHiPerFET^TM

Power MOSFET

V_DSS= 500V

I_D25= 132A

R_DS(on)≤ 39mΩ

IXFB132N50P3

t_rr

≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

PLUS264^TM

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_DGR

Tab

V_GSS

V_GSM

Continuous

Transient

±30

±40

G = Gate

= Drain

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

132

330

= Source

Tab = Drain

I_A

E_AS

T_C= 25°C

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Features

1890

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

Low R_DS(on)and Q_G

T_L

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

°C

T_SOLD

F_C

260

30..120/6.7..27

Mounting Force

N/lb.

Advantages

Weight

Easy to Mount

Space Savings

Applications

^zDC-DC Converters

^zBattery Chargers

^zSwitch-Mode and Resonant-Mode

Power Supplies

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

500

3.0

Typ.

Max.

^zUninterrupted Power Supplies

^zAC Motor Drives

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

^zHigh Speed Power Switching

Applications

5.0

±200 nA

I_DSS

50 μA

T_J= 125°C

6 mA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_DSS, Note 1

39 mΩ

DS100315(03/11)

12 3 4 5

中文翻译

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