Datasheet > IXFB300N10P

IXFB300N10P

更新时间： 2024-11-18 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	127K
描述
Polar Power MOSFET HiPerFET

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中文翻译

获取价格

数据手册

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IXFB300N10P 数据手册

Preliminary Technical Information

Polar^TMPower MOSFET

V_DSS= 100V

I_D25= 300A

R_DS(on)≤ 5.5mΩ

≤ 200ns

IXFB300N10P

HiPerFET^TM

N-Channel Enhancement Mode

Avalanche Rated

t_rr

Fast Intrinsic Diode

PLUS264^TM(IXFB)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

100

V_GSS

V_GSM

Continuous

Transient

±20

±30

(TAB)

I_D25

I_LRMS

I_DM

T_C= 25°C

Leads Current Limit, RMS

T_C= 25°C, pulse width limited by T_JM

300

900

G = Gate

S = Source

= Drain

TAB = Drain

I_A

T_C= 25°C

100

E_AS

Features

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

T_C= 25°C

V/ns

1500

• Fast intrinsic diode

• Avalanche Rated

• Low R_DS(ON)and Q_G

• Low package inductance

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

Advantages

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

Easy to mount

Space savings

High power density

F_C

Mounting force

30..120/6.7..27

N/lb.

Weight

Low gate drive requirement

Applications

• DC-DC coverters

Symbol

Test Conditions

Characteristic Values

• Battery chargers

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC and DC motor drives

• Uninterrupted power supplies

• High speed power switching

applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

100

3.0

5.0

±200

I_DSS

V_DS= V_DSS

V_GS= 0V

μA

T_J= 150°C

1.5 mA

R_DS(on)

V_GS= 10V, I_D= 50A, Note 1

5.5 mΩ

DS100015(07/08)

12 3 4

中文翻译

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